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Equipment for growth of horizontal chromium doped semi-insulation gallium arsenide

A semi-insulating, gallium arsenide technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of affecting the crystal growth rate of crystal growth, increase the cost of crystal growth, increase the difficulty of equipment manufacturing, etc., and achieve crystal growth. The effect of low cost, high crystallization rate and simplified equipment

Inactive Publication Date: 2007-10-31
新乡市神舟晶体科技发展有限公司
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Problems solved by technology

This not only increases the difficulty of equipment manufacturing, but also increases the cost of crystal growth. Moreover, there are multiple heating bodies in the solid-phase region of the solid-liquid interface, which makes it difficult to increase the axial temperature gradient during crystal growth, which directly affects the crystallization of crystal growth. Rate

Method used

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  • Equipment for growth of horizontal chromium doped semi-insulation gallium arsenide
  • Equipment for growth of horizontal chromium doped semi-insulation gallium arsenide

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Embodiment Construction

[0007] The present invention maintains the vapor pressure by strictly controlling the amount of arsenic in the arsenic pressure chamber 10 on the quartz reaction boat 7 in the reflection chamber 8, and the whole system is kept above the condensation point of arsenic during crystal growth, and the change of the arsenic pressure is affected by the temperature change The influence of arsenic is very small, the amount of arsenic used to control the arsenic pressure is maintained at 5-10‰ of the original amount of gallium arsenide polycrystalline, and the amount of pure chromium doped is controlled at 3-5‰.

[0008] Its technological process is:

[0009] 1. Use emery to quickly and evenly spray the inner cavity of the arsenic reaction boat until the filament of the 100W incandescent lamp can be clearly observed at a distance of 15-30 cm across the quartz reaction boat;

[0010] 2. The sandblasted quartz reaction boat is treated with acid, ultrasonically cleaned, dried, placed in mo...

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Abstract

The invention discloses a growth device of horizontal blended chromium semi-insulating gallium arsenide crystal, which is characterized by the following: comprising a horizontal placed tubular thermal field device; arranging a arsenic pressing chamber on lower of seed crystal chamber of reacting boat in reacting room corresponding to viewfinder of insulating layer. This invention possesses the advantages of simplified device, easy production, low coat, good stability and high crystal-forming ratio.

Description

Technical field: [0001] The invention relates to the manufacture of electrical components, in particular to a growth device for horizontal chromium-doped semi-insulating gallium arsenide crystals. Background technique: [0002] The growth of the existing horizontal chromium-doped semi-insulating gallium arsenide crystal is carried out in a cylindrical thermal field device, and the thermal field device is a heating body 3 uniformly fixed along the circumferential axis in a horizontal insulation layer, A window 2 is provided in the upper middle part of the insulation layer, and a seed crystal chamber 6 is provided in the thermal field corresponding to the window, and a reaction boat 7 is provided on the left side of the seed crystal chamber. The periphery of the reaction boat is the main reaction chamber 8. A sealing bubble 9 is provided at the left end, and an auxiliary heating body 4 with a sealed outer end is arranged on the heating body circle on the right side of the seed...

Claims

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Application Information

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IPC IPC(8): C30B29/42C30B25/00
Inventor 李百泉郑松龄
Owner 新乡市神舟晶体科技发展有限公司
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