Ultrasonic-atomizing heat-decomposing compound semiconductor film preparing system

Abstract

The invention relates to a preparation system of supersonic atomization thermal decomposition compound semiconductor thin film, which is used to prepare the semiconductor thin film of the oxide and the sulfide on the plane matrix. The system consists of atomization and deposit two major parts. Atomization part consists of the carrier gas source, stock solution pot, atomizing chamber and the corresponding electric circuit, while deposit part consists of sealing chamber, spray nozzle, warm table, the electrically operated transmission module, temperature control unit, vacuum manometer, and bubbling pond. Stock solution pot, atomizing chamber, spray nozzle, and sealing chamber are adopted unique design methods. The invention has the merits of cost lowly, operation stable, thin film quality to be good and so on, and the invention can apply to the scientific research and the industrial production of the oxide and the sulfide semiconductor thin film.

Description

technical field [0001] The invention belongs to the field of compound semiconductor thin film preparation and relates to a novel ultrasonic spray thermal decomposition compound thin film preparation system. This system can be applied to the preparation of low-cost and high-quality sulfide and oxide semiconductor thin films. Background technique [0002] Compound semiconductor thin films are widely used in electronic devices, solar cells, functional materials, photoelectrochemical hydrogen production and other fields. However, the preparation of low-cost and high-quality compound semiconductor thin films has always been a difficult problem restricting the development of related scientific research work and industrial technology. At present, the preparation methods of most semiconductor thin film materials are generally methods such as chemical vapor deposition (CVD), magnetron sputtering, vacuum evaporation, etc. These methods are expensive in equipment and make the preparat...

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Problems solved by technology

The common implementation of spray pyrolysis technology is to atomize the solution at the atomization nozzle through high-pressure gas, and spray it directly on the substrate to form a thin film. The disadvantage of this atomization method is that the droplets are large and uneven, and the It is not easy to control, so the surface roughness of the formed film is large, the film is not dense, and generally causes undesirable results such as uneven thickness and thicker center than the surrounding; due to continuous spraying, it is easy to cause insufficient thermal decomposition of the components in the droplet, Influence the quality of film-forming materials (see M.Okuya et al.Solid State Ionics172(2004)527-531)

In some spray coating equipment, the mixing method of carrier gas and mist droplets is too simple and uneven, so it is easy to cause uneven film thickness during the coating process

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