Ultrasonic-atomizing heat-decomposing compound semiconductor film preparing system

Abstract

The invention relates to an ultrasonic spray thermal decomposition compound semiconductor thin film preparation system, which is used for preparing oxide and sulfide semiconductor thin films on a flat substrate. The system consists of two parts, atomization and deposition. The atomization part consists of a carrier gas source, a liquid storage tank, an atomization chamber and corresponding circuits, and the deposition part consists of a sealed chamber, a nozzle, a heating platform, an electric transmission component, a temperature controller, a vacuum pressure gauge and a bubbling pool. Among them, the liquid storage tank, atomization chamber, nozzle, and sealing chamber all adopt unique designs. The invention has the advantages of low cost, stable operation, good film forming quality, etc., and can be applied to scientific research and industrial production of oxide and sulfide semiconductor thin films.

Description

technical field [0001] The invention belongs to the field of compound semiconductor thin film preparation, and relates to a preparation system for ultrasonic spray pyrolysis compound thin film. This system can be applied to the preparation of low-cost and high-quality sulfide and oxide semiconductor thin films. Background technique [0002] Compound semiconductor thin films are widely used in electronic devices, solar cells, functional materials, photoelectrochemical hydrogen production and other fields. However, the preparation of low-cost and high-quality compound semiconductor thin films has always been a difficult problem restricting the development of related scientific research work and industrial technology. At present, the preparation methods of most semiconductor thin film materials are generally methods such as chemical vapor deposition (CVD), magnetron sputtering, vacuum evaporation, etc. These methods are expensive in equipment and make the preparation cost high...

AI Technical Summary

Problems solved by technology

The common implementation of spray pyrolysis technology is to atomize the solution at the atomization nozzle through high-pressure gas, and spray it directly on the substrate to form a thin film. The disadvantage of this atomization method is that the droplets are large and uneven, and the It is not easy to control, so the surface roughness of the formed film is large, the film is not dense, and generally causes undesirable results such as uneven thickness and thicker center than the surrounding; due to continuous spraying, it is easy to cause insufficient thermal decomposition of the components in the droplet, Influence the quality of film-forming materials (see M.Okuya et al.Solid State Ionics172(2004)527-531)

In some spray coating equipment, the mixing method of carrier gas and mist droplets is too simple and uneven, so it is easy to cause uneven film thickness during the coating process

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