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A tunnel probe for scanning the tunnel microscope and its making method

A technology of scanning tunneling and microscopy, applied in the field of tunneling probes, can solve the problems of difficult manufacturing process and difficult to obtain high-resolution tunneling probes, and achieve the effect of improving resolution

Inactive Publication Date: 2010-12-08
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Another object of the present invention is to overcome the difficulty of the existing tunnel probe preparation process, and it is difficult to obtain high-resolution tunnel probe defects, thereby providing a simple and convenient, high yield, and especially suitable for the preparation of Preparation method of spin-polarized tunnel probe

Method used

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  • A tunnel probe for scanning the tunnel microscope and its making method
  • A tunnel probe for scanning the tunnel microscope and its making method
  • A tunnel probe for scanning the tunnel microscope and its making method

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Experimental program
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Effect test

Embodiment 1

[0046] Embodiment 1, preparation of high-resolution metal W tunnel probe

[0047] On both sides of the Si(100) substrate 1, a 100-nm-thick SiN film 2 was prepared by chemical vapor deposition (CVD), and then a window of 0.2×0.2 square millimeters was opened on one side by ultraviolet lithography. , using chemical reaction etching to remove the SiN film in the window. Put the sample into 65°C, 4M KOH solution for etching. Since the rate of etching Si by KOH solution is much higher than that of etching SiN, it is obtained as follows figure 2 As shown in , there is a SiN film with a window etched on one side of the Si substrate, and there is also a 0.2×0.2 square millimeter window in the center of the Si substrate. The Si substrates on both sides serve as supports for the SiN film on the other side. To ensure that the SiN film at the window is not broken, and at the same time facilitate the processing of the sample.

[0048] Using the focused ion beam (FIB) etching method, on ...

Embodiment 2

[0050] Example 2. Preparation of high-resolution ferromagnetic metallic Co spin-polarized tunneling probes

[0051] Using the focused ion beam (FIB) etching method, on the 100nm thick SiN insulating layer described in Example 1, prepare a rounded frustum-shaped hole with a diameter of 40 nanometers on the upper surface and a diameter of 3 nanometers on the lower surface. The conditions are as follows: ion acceleration voltage 30KV, ion beam current 10PA, ion point residence time 30μs, ion beam minimum step size 5nm, ion beam emission current 22μA, sample chamber vacuum 3×10 -5 Pa, the etching time is 0.3 seconds, and a rounded truncated hole with a diameter of 40 nanometers on the upper surface and a diameter of 3 nanometers on the lower surface can be obtained on the SiN insulating layer.

[0052] Then use molecular beam epitaxy to deposit ferromagnetic metal Co on the SiN substrate with rounded frustum-shaped holes, the deposition conditions are: system vacuum 3 × 10 -10 Pa...

Embodiment 3

[0053] Embodiment 3, prepare high-resolution semimetallic CrO 2 High Spin Polarization Tunneling Probe

[0054] Using the focused ion beam (FIB) etching method, on the 100nm thick SiN insulating layer described in embodiment 1, prepare the hole that the upper surface diameter is 20 nanometers, the lower surface diameter is 1 nanometer round frustum shape, etch The conditions are as follows: the ion acceleration voltage is 30KV, the ion beam current is 10PA, the ion point residence time is 30μs, the minimum ion beam step size is 5nm, the ion beam emission current is 22μA, and the vacuum degree of the sample chamber is 3×10 -5 Pa, the etching time is 0.2 seconds, and a rounded frustum-shaped hole with a diameter of 20 nanometers on the upper surface and a diameter of 1 nanometer on the lower surface can be obtained on the SiN insulating layer.

[0055] The semimetallic CrO was then deposited on the SiN substrate with rounded frustum-shaped holes using a laser pulse deposition m...

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Abstract

The invention discloses a tunnel probe and making method for scanning tunnel microscope, which is characterized by the following: using pre-punching and sedimenting method; controlling focal ion beam to etch; proceeding electronic beam exposure and ion etching; obtaining fine probe with high distinguishability; making the probe diameter at nanometer level; using or removing insulated film substrate directly to remain conductive material in the inverted rotary table shaped pore as probe without guiding impurity and carbon layer and oxide layer on the probe surface; obtaining the probe of kindsof conductive material.

Description

technical field [0001] The invention relates to a tunnel probe for a scanning tunnel microscope and a preparation method thereof. Background technique [0002] As a new type of surface analysis instrument, scanning tunneling microscope (STM) enables humans to observe the arrangement state of individual atoms on the surface of matter and the physical and chemical properties related to the electronic behavior of the surface in real time for the first time. It has great significance and broad prospects in the research of life science and other fields. For this, its inventors Bining and Rohrer were awarded the 1986 Nobel Prize in Physics. [0003] The basic principle of STM is to use the tunneling effect in quantum theory. The ultra-thin probe with atomic dimensions and the surface of the substance to be studied are used as two electrodes. When the distance between the sample and the probe tip is very close (usually less than 1nm), electrons will pass through the two electrode...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G12B21/04G01N13/12H01L21/00G01Q60/16
Inventor 魏红祥韩秀峰王天兴张晓光
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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