Method for making flexibility temperature sensor

Abstract

This invention discloses a production method of flexibility humidity sensor. Its character is washing a dimethyl siloxane interlayer on silicon dice carrier firstly, after solidification in room-temperature, activing the surface with oxygen plasma, then washing high viscosity polyimide again and procuring with staged technology, then, overlapping and depositing all the metal coating and using stripping technology and wet-method corroding figure technology to firm mental humidity-dependent resistor and electric connector, after this, overlapping a light low viscosity PI protective layer, using wet method to corrode the outside metal press welding part; then putting the device on the heating plate and peeling the interlayer from the flexible carrier, after all, putting the flexible carrier peeled into the bake oven to solidify it to two PI membranous layers completely, so realizing the compatible craft. The method to make it is simple, the cost is low and the rate of finished products is high, and it is more near the achievement of mass production and the integration of the high density sensor.

Description

technical field [0001] The invention relates to a manufacturing method of a flexible MEMS temperature sensor, which belongs to the field of manufacturing micro-electromechanical systems (MEMS). Background technique [0002] With the continuous development of microfabrication technology, traditional silicon-based MEMS sensors are not enough to meet the growing demand for flexible structural devices such as wearable electronic devices, foldable electronic devices, robotic sensing systems, and smart skins due to the relatively hard substrate. Therefore, the technology of fabricating MEMS devices on flexible substrates has attracted more and more attention from scholars. Polyimide (PI) has been selected as an ideal flexible substrate material due to its unique and excellent comprehensive properties. It has good electrical and thermal isolation performance, high mechanical strength, strong chemical corrosion resistance, and good high temperature stability. Recently, more and mo...

AI Technical Summary

Problems solved by technology

However, the following problems inevitably exist in the method of attaching PI film: firstly, there are inevitably no air bubbles between the attached PI and the carrier silicon wafer, and secondly, during the thermal cycle, PI is prone to plastic deformation under the action of thermal stress, so Under the high temperature conditions necessary for the subsequent process, the PI thin film attached to the carrier silicon wafer is prone to displacement, which brings great difficulties to the alignment photolithography, thereby reducing the device yield

After the liquid PI prepolymer coating layer is fully cured, it has basically similar properties to the solid PI film that has been formed. Therefore, the liquid PI prepolymer is a very ideal flexible material. However, in the second production method, the PI flexible Release of devices from processed carrier wafers remains a major challenge

It is not only time-consuming to completely release the large-area sacrificial layer between the carrier silicon wafer and the PI flexible substrate, but also soaking the device in the release solution for a long time will affect the performance of the flexible device and its structural integrity to varying degrees

In summary, although liquid PI prepolymer is an ideal flexible substrate material from the current point of view, how to easily separate the flexible temperature sensor array from the processing carrier silicon wafer and ensure the integrity of the device , this is a question that must be considered

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