A crystal silicon solar battery thermal diffusion method for making PN node
A technology of solar cells and thermal diffusion, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems affecting the quality of PN junctions, thermal stress bending, fragmentation, etc., to improve production stability and quality consistency, and improve short circuit Current, the effect of reducing production costs
Active Publication Date: 2007-12-12
ZHEJIANG GUANGDA ELECTRONICS TECH
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Problems solved by technology
In the actual work of preparing PN junctions by thermal diffusion, high-temperature thermal diffusion is generally used, but high temperature will cause thermal damage to crystalline silicon, and the huge temperature difference when the high-temperature silicon wa
Method used
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Experimental program
Comparison scheme
Effect test
Embodiment 1
[0009] Embodiment 1. Take a crystalline silicon chip after cleaning and surface treatment and place it in a diffusion furnace. Set some specific gas flow rates depending on the type of diffusion impurity source and the specification of the quartz tube of the diffusion furnace. The diffusion temperature of the diffusion phosphorus impurity source is 800°C ~950°C, the time to diffuse the phosphorus impurity source is (10-40) minutes, after the end of the diffusion of the phosphorus impurity source, start to cool down, and the cooling time is (10-60) minutes, when the temperature of the silicon wafer is 200°C-300°C lower than the diffusion temperature Leave the high temperature diffusion furnace and enter the next process.
[0010] The results of the two methods are compared in the following table:
[0011] Preface
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The invention provides a new method of crystal silicon solaode thermal diffusion to prepare PN knot, the method relates to filed of crystal silicon solaode technique, steps includes: adding step of silicon piece cooling, controlling temperature and time to craftwork of producing PN knot in step (3) of normal crystal silicon solaode, that is cooling before silicon piece departs high temperature diffusion furnace, temperature of the silicon piece in quartz tube is decreased for 200deg.C-300deg.C. Concrete steps are following: a. setting thermal diffusion craftwork parameter to prepare PN knot; b. cooling silicon piece in quartz tube to make temperature of silicon piece 200deg.C-300deg.C lower than diffusion temperature, time of cooling is (10-60) minutes; c. picking up silicon piece from quartz tube. Adopting said new method can decrease heat injury of crystal silicon, decrease heat stress curving or cataclasm, decrease affect of impurity to PN knot, current, voltage, power and photoelectricity conversion efficiency of crystal silicon solaode can be increased, cost of production is decreased.
Description
technical field [0001] The invention relates to the technical field of crystalline silicon solar cells, in particular to a new method for preparing PN junctions by thermal diffusion of crystalline silicon solar cells. Background technique [0002] At present, the common process route for industrial production of crystalline silicon solar cells is: (1) silicon wafer cleaning, (2) removal of silicon wafer damage layer and preparation of suede, (3) thermal diffusion to prepare PN junction, (4) removal of silicon wafer Peripheral PN junction, (5) Clear the oxide layer on the illuminated surface of the silicon wafer, (6) Prepare the anti-reflection film, (7) Screen print the back electrode silver paste, the back electric field aluminum paste and the front electrode silver paste, (8) Aluminum back Field sintering and silver electrode alloy, (9) Test and inspection. In the actual work of preparing PN junctions by thermal diffusion, high-temperature thermal diffusion is generally u...
Claims
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Login to view more IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 唐则祁
Owner ZHEJIANG GUANGDA ELECTRONICS TECH
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