Method for preparing Nano structure and thin film of molybdenum trioxide by using infrared sintering furnace
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SUN YAT SEN UNIV
- Publication Date
- 2007-12-26
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Abstract
Description
technical field
[0001] The invention relates to a method for preparing a molybdenum trioxide nanostructure and a film thereof by using an infrared sintering furnace. Background technique
[0002] Molybdenum has a relatively low work function among metals, and has good temperature characteristics, small evaporation rate, and good mechanical properties. It is a classic field electron emission material. Molybdenum oxide is a semiconductor material, such as molybdenum trioxide (MoO 3 ) is an n-type wide bandgap semiconductor material. It has a wide range of applications in electrochromic, solid-state micro-batteries, and memory materials. At the same time, it is also a good catalyst for the synthesis of molybdenum compounds such as MoS 2 , MoSe 2 etc. precursors. In materials with electrochromic properties such as WO 3 , NiO 3 , IrO 2 , V 2 o 5 , MnO 2 、MoO 3 Wait, MoO 3 Yes except WO 3 One of the most studied materials. MoO 3 It has a relatively flat absorption sp...