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Silicate substrate luminescent material with multiple emission peak, preparation method thereof and luminescent device using the same

A technology for luminescent materials and light-emitting devices, applied in luminescent materials, chemical instruments and methods, electrical components, etc., can solve problems such as poor chemical stability and aging resistance, shortened service life, and low luminous brightness

Active Publication Date: 2011-06-15
DALIAN LUMINGLIGHT SCIENCE & TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the luminous brightness of sulfide fluorescent materials is low, although the color rendering index is improved, but the lumen efficiency of the LED is reduced; moreover, its chemical stability and aging resistance are poor, and the chip is corroded, which shortens the service life of the LED

Method used

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  • Silicate substrate luminescent material with multiple emission peak, preparation method thereof and luminescent device using the same
  • Silicate substrate luminescent material with multiple emission peak, preparation method thereof and luminescent device using the same
  • Silicate substrate luminescent material with multiple emission peak, preparation method thereof and luminescent device using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] raw material

[0058] The raw materials of the above composition are fully ball milled and mixed, put into a crucible, and after cooling, put them into a furnace filled with a mixed gas of 95% nitrogen and 5% hydrogen for sintering, and heat-preserve and sinter at 1200°C for 6 hours . After the sintered body is cooled, pulverize, grind with a ball mill, and then sieve with a 325-mesh sieve, the chemical composition obtained in the present invention is 2.97BaO 1.02MgO 2.01SiO 2 :0.01Eu 2+ 0.05Mn 2+ 0.005F - 0.005 Li + of luminous materials. The excitation spectrum of the material is in the range of 240-450nm; the emission spectrum has three emission peaks in the range of 400-760nm, and the emission peak wavelengths are respectively located at 438nm, 502nm and 617nm.

Embodiment 2~36

[0060] Prepare Examples 2-36 according to the process flow in Example 1, wherein the element types and contents of A and A' in the matrix composition are changed according to the wavelength position of the emission peak; the firing temperature is in the range of 1000-1300 ° C according to the furnace capacity It varies with the weight of the material, the type of the material and the formula; the reducing atmosphere is in the presence of hydrogen, ammonia, nitrogen and hydrogen or carbon particles. Luminescent material examples of the following chemical compositions with double emission peaks were obtained.

Embodiment 2

[0061] Example 2 2.03SrO·0.92MgO·1.0SiO 2 :0.03Eu 2+ 0.02F - 0.07Li +

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PUM

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Abstract

A silicate luminescence material which can be excited by excitation light source of from ultraviolet light to blue region and a production method thereof particularly relate to luminescence device of white series. The material has an emission spectrum with at least two peak values in the range of 370-760nm. The same components of the luminescence material are: aAO. bA' O.cSiO2: xEu. yLn, zM.,Delta N, wherein, A consists of one element or a combination of a plurality of elements: Sr, Ca and Ba; A' consists of one element or a combination of a plurality of elements: Mg, Zn; Ln consists of one element or combination of a plurality of elements: Nd, Dy, Ho, Tm, La, Ce, Er, Pr, Bi, Sm, Sn, Y, Lu, Ga, Sb, Tb, Mn and Pb; M consists of a halogen-ion or a combination of a plurality of elements and ions; N consists of one element of or a combination of a plurality of elements and ions in Li+, Na+, K+ and Ag+; a, b, c, x, y, z, Delta are molar coefficients.

Description

technical field [0001] The invention relates to a luminescent material, in particular to a luminescent material for a white light-based light-emitting device including a semiconductor light-emitting element (LED), a method for manufacturing the luminescent material and a light-emitting device using it, belonging to optoelectronics and semiconductor lighting technology field. Background technique [0002] The emergence of white light LED is a substantial step from the identification function to the lighting function of LED. White LEDs are closest to sunlight and can better reflect the true color of the illuminated objects. Because it also has the distinctive characteristics of no pollution, long life, vibration resistance and impact resistance, from a technical point of view, white light LED is undoubtedly the most cutting-edge technology of LED, and will become a new generation of light source in the 21st century - the fourth generation of electric light source. The applic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/79C09K11/84C09K11/81H01L33/00H01L33/50
Inventor 夏威辛易胡大强肖志国
Owner DALIAN LUMINGLIGHT SCIENCE & TECHNOLOGY CO LTD