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Single membrane capacitance type microphone chip

A condenser microphone and microphone technology, applied in the field of microphones, can solve the problems of complex manufacturing process, poor frequency response characteristics of microphones, and high mechanical sensitivity, and achieve the effects of simple manufacturing process, broadband characteristics, and high sensitivity

Active Publication Date: 2008-03-12
WEIFANG GOERTEK MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The double-film condenser semiconductor microphone needs to make a double-layer free film on the substrate. The manufacturing process is relatively complicated, and it faces technological problems such as "soft back electrode" and adhesion.
Compared with the double-film condenser semiconductor microphone, the single-film condenser semiconductor microphone has a simple structure and is easy to realize, but the reported single-film semiconductor condenser microphone has deficiencies, which are mainly manifested in: 1. Low sensitivity: the silicon substrate acts as the back electrode Considering the acoustic requirements, a sound hole should be left on the substrate. Due to the limitation of the process, the position of the sound hole must face the middle area of ​​the diaphragm, and the middle area of ​​the diaphragm has high mechanical sensitivity and low edge, which wastes the middle position of the diaphragm. , which reduces the sensitivity of the microphone. Second, the frequency response characteristics are poor: the sound hole is only in the middle of the diaphragm, and the microphone has poor frequency response characteristics when the diaphragm vibrates.

Method used

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  • Single membrane capacitance type microphone chip
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Examples

Experimental program
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Effect test

Embodiment 1

[0037] As shown in Figures 1-3, Embodiment 1 of the present invention is a single-membrane condenser microphone chip structure of the present invention, as shown in Figures 1 and 2, which is characterized by a single-membrane with a cantilever beam on the top and a diaphragm on the bottom Structure, from bottom to top: base 21, cantilever support 22, stopper support 23, diaphragm 24, cantilever beam 25 and cantilever frame 26, stopper 27 and stopper frame 28, and lower electrode 29, upper electrode 30 , the edge of the diaphragm 24 and the base 21 form a capacitive structure.

[0038] Wherein, there is a through hole in the center of the base 21, which is the back cavity 31, and the upper surface of the base 21 is fixedly connected with a frame-shaped stop support 23, and the upper surface of the stop support 23 is fixedly connected with a frame-shaped stop frame 28, and the center of the stop support 23 and The square through hole in the center of the stop frame 28 is similar...

Embodiment 2

[0049] As shown in Figure 4-6, it is the second embodiment of the present invention, which is another single-membrane condenser microphone structure in the present invention, as shown in Figure 4 and Figure 5, the basic structure and materials used are the same as the first embodiment, from the bottom On the top are: base 21, cantilever support 22, stopper support 23, cantilever beam 25 and cantilever frame 26, diaphragm 24, stopper 27 and stopper frame 28, as well as lower electrode 29, upper electrode 30, diaphragm 24 The edge and base 21 form a capacitive structure. It is characterized by a single-membrane structure with the diaphragm 24 on top and the suspension beam 25 on the bottom. Simultaneously, at the periphery of the through hole at the center of the stop frame 28, a plurality of evenly arranged toothed anti-vibration stoppers 27 extending horizontally into the hole are removed, while the through holes at the center of the stop support 23 and the center of the stop ...

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Abstract

The present invention discloses a single film capacitance type microphone chip, which relates to a microphone technology, the present invention is a single film capacitance type microphone, a capacitance structure is formed by utilizing a single film and a base seat. A vibrating diaphragm is connected with the upper surface of a cantilever beam support through the cantilever beam frame of the cantilever beam, forming a three-dimensional vibrating structure that the cantilever beam and the vibrating diaphragm is not at the same level; the cantilever beam is flexible, the vibrating diaphragm is rigid, the distortion is mainly concentrated on the cantilever beam when the vibrating diaphragm vibrates, the vibrating diaphragm basically keeps a translational movement; a plurality of apertures are arranged on the edge of the vibrating diaphragm to improve a frequency response property, a corrosion hole is arranged simultaneously; in addition, a shock-proof back stop is manufactured on the chip. The present invention has the advantages that the sensitivity is high, the noise is low, the property is wide frequency band, the volume of the chip is small, the manufacture process is simple, and the volume production is easy.

Description

technical field [0001] The invention relates to the technical field of microphones, in particular to a single-film condenser microphone chip. Background technique [0002] The research on semiconductor microphone chips has a history of more than 20 years, during which various types of microphones have been developed and implemented on silicon chips. Among them, the most important and popular one is the condenser silicon microphone. Capacitive silicon microphones not only have the characteristics of small size, high sensitivity, good frequency response characteristics, and low noise, but more importantly, they have a wide operating temperature and are suitable for SMT and other automated production lines and harsh working environments. [0003] For capacitive silicon microphones, the current reports and patents mostly use a double-film capacitor structure. Micro-machining technology is used to make a diaphragm and a double-film back electrode on a silicon chip to form a capa...

Claims

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Application Information

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IPC IPC(8): H04R19/01H04R19/04
CPCH04R1/02H04R3/04H04R19/04H04R2201/02
Inventor 宋青林梅嘉欣陶永春
Owner WEIFANG GOERTEK MICROELECTRONICS CO LTD
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