Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor EL part building in metal layer in the adulteration layer based on set image

An electroluminescent device and doped layer technology, which is applied in the field of integrated optoelectronics, can solve the problems of weak surface plasmon wave enhancement effect and inability to improve internal quantum efficiency, etc. The effect of quantum efficiency enhancement

Inactive Publication Date: 2008-04-30
TSINGHUA UNIV
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, since there is a doped layer with a thickness of hundreds of nm between the metal layer and the active region, the enhancement effect of the surface plasmon wave on the luminescence of the active region is quite weak, and the internal quantum efficiency can hardly be improved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor EL part building in metal layer in the adulteration layer based on set image
  • Semiconductor EL part building in metal layer in the adulteration layer based on set image
  • Semiconductor EL part building in metal layer in the adulteration layer based on set image

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] The basic structure of a semiconductor electroluminescence device embedded in a metal layer with a single layer of through holes is shown in Figure 4.

[0045] At a doping concentration of 3×10 16 cm -3 On p-type SiC(11), grow 50nm SiN x Nanocrystalline silicon (12) is used as the active region, and then 10nm SnO is deposited by magnetron sputtering 2 (13). Throw electron beam glue with a thickness of 300nm, carry out electron beam exposure, development, and fixation, and the remaining glue pattern is a disk with a diameter of about 450nm, which is periodically distributed in a square grid with a period of 630nm. Sequential deposition of 15 nm Si by magnetron sputtering 3 N 4 (15), 5nm Au(14), 15nm Si 3 N 4 (15). After degumming and washing, anneal at 700°C for 10 minutes. in KI / I 2 / H2O (1g / 1g / 200mL) Au corrosion solution soaked for 1min, after cleaning, and then deposited 300nm SnO by magnetron sputtering 2 (13). Finally, an upper electrode (17) and a lowe...

Embodiment 2

[0048] The basic structure of a semiconductor electroluminescent device with a single-layer disk embedded in a metal layer is shown in Figure 5.

[0049] At a doping concentration of 3×10 16 cm -3 On p-type SiC(11), grow 50nm SiN x Nanocrystalline silicon (12) is used as the active region, and then 10nm SnO is deposited by magnetron sputtering 2 (13). Throwing electron beam glue with a thickness of 300nm, electron beam exposure, development, and fixation, the remaining glue pattern contains holes with a diameter of about 150nm, which are periodically distributed in a square grid with a period of 420nm. Sequential deposition of 15 nm Si by magnetron sputtering 3 N 4 (25), 5nm Au(24), 15nm Si 3 N 4 (25). After degumming and washing, anneal at 700°C for 10 minutes. in KI / I 2 / H2O (1g / 1g / 200mL) Au corrosion solution soaked for 1min, after cleaning, and then deposited 300nm SnO by magnetron sputtering 2 (13). Finally, an upper electrode (17) and a lower electrode (16) a...

Embodiment 3

[0052] The basic structure of a single-layer one-dimensional grating-like semiconductor electroluminescence device embedded in a metal layer is shown in FIG. 6 .

[0053] At a doping concentration of 3×10 16 cm -3 cm -3 On p-type SiC(11), grow 50nm SiN x Nanocrystalline silicon (12) is used as the active region, and then 10nm SnO is deposited by magnetron sputtering 2 (13). Electron beam glue with a thickness of 300nm was thrown off, electron beam exposure, development, and fixation were performed, and the remaining glue pattern was a one-dimensional periodic grating with a duty ratio of 50% and a period of 420nm. Sequential deposition of 15 nm Si by magnetron sputtering 3 N 4 (35), 5nm Au(34), 15nm Si 3 N 4 (35). After degumming and washing, anneal at 700°C for 10 minutes. in KI / I 2 / H2O (1g / 1g / 200mL) Au corrosion solution soaked for 1min, after cleaning, and then deposited 300nm SnO by magnetron sputtering 2 (13). Finally, an upper electrode (17) and a lower ele...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a semiconductor electrofluorescence device embedded in metal layers according to setup figures in doped layer used in active optical electronic devices and optoelectronic integration fields and pertains to integrated optoelectronic technical field. The invention is characterized in that: the metal layer wrapped with insulating medium is embedded in the doped layer; the distribution position is determined by the setup figures; and the semiconductor medium in the doped layer runs through the other parts outside the figure area. The design guarantees current carrier flowing into the active area by the doped layer and effectively utilizes the enhancement effect of metal surface plasma on luminous efficiency. The invention is good for further improving the efficiency of electrofluorescence device based on gallium nitride material and provides the practical application of electrofluorescence devices based on zinc oxide, nc-Si and other materials with possibility.

Description

technical field [0001] The invention relates to a semiconductor electroluminescent device embedded with metal according to a set pattern in a doped layer used in the fields of active optoelectronic devices and optoelectronic integration, and belongs to the technical field of integrated optoelectronics. Background technique [0002] Surface plasmon wave [Surface Plasmon Polariton (SPP)] is a mutual coupling vibration of electromagnetic field and metal surface electrons, and its amplitude decays exponentially with the distance away from the interface in the medium. SPP is a kind of surface wave, which can limit the light wave laterally to the sub-wavelength scale; and its dispersion curve is flat near the resonance frequency, and the photon density of states is large, and its spontaneous emission can be enhanced when it interacts with the active medium. Active optoelectronic devices, photonic integration and other fields will have broad application prospects. [0003] Althoug...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/02H01L33/14H01L33/36
Inventor 黄翊东唐选张巍彭江得
Owner TSINGHUA UNIV