Film transistor array substrate for liquid crystal display and manufacture thereof
A technology for thin film transistors and liquid crystal displays, which is used in semiconductor/solid-state device manufacturing, photoengraving processes for patterned surfaces, instruments, etc., can solve the problem of high production costs, and achieve the effects of reducing manufacturing costs and increasing productivity.
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Embodiment 1
[0045] 1A-1D are schematic cross-sectional structural diagrams of a manufacturing process of a TFT array substrate of a liquid crystal display according to an embodiment of the present invention, and FIGS. 2A-2B are schematic top views of a TFT array substrate of a liquid crystal display at different manufacturing stages.
[0046] Please refer to FIG. 1A and FIG. 2A at the same time. FIG. 2A is a schematic top view of FIG. 1A . A transparent conductive layer 102 and a first photoresist layer 104 are sequentially formed on the substrate 100, and then a photolithographic etching process is performed using a first photomask to simultaneously form scanning line trenches 106 and capacitance line trenches 108 on the substrate 100 . The substrate 100 other than the scan line trenches 106 and the capacitor line trenches 108 is still covered by the transparent conductive layer 102 and the first photoresist layer 104 in sequence.
[0047] In FIG. 2A , the scan line trench 106 can be di...
Embodiment 2
[0058] 3A-3G are schematic cross-sectional structural diagrams of a manufacturing process of a TFT array substrate of a liquid crystal display according to an embodiment of the present invention, and FIGS. 4A-4B are schematic top views of a TFT array substrate of a liquid crystal display at different manufacturing stages.
[0059] In FIG. 3A , firstly, a transparent conductive layer 302 , a sacrificial layer 304 and a first photoresist layer 306 are sequentially formed on a substrate 300 . Then, for example, a half-tone photomask is used as the first photomask to perform a lithography process on the first photoresist layer 306 to pattern the first photoresist layer 306 to form the first photoresist layer as shown in FIG. 3A. Outline of the resist layer 306 . The region of the capacitor line, the region of the scan line and the region of the TFT gate are fully exposed regions, so there is no first photoresist layer 306 on these regions. In the terminal area at the end of the s...
Embodiment 3
[0075] 5A-5E are schematic cross-sectional structural diagrams of a manufacturing process of a TFT array substrate of a liquid crystal display according to an embodiment of the present invention, and FIGS. 6A-6B are schematic top views of a TFT array substrate of a liquid crystal display at different manufacturing stages.
[0076] Please refer to FIG. 5A and FIG. 6A at the same time. FIG. 6A is a schematic top view of FIG. 5A . A transparent conductive layer 502 and a first photoresist layer 504 are sequentially formed on the substrate 500, and then a photolithographic etching process is performed using the first photomask to simultaneously form the scanning line trench 506 and the capacitance line trench 508 on the substrate 500 . The substrate 500 other than the scan line trench 506 and the capacitor line trench 508 is still covered by the transparent conductive layer 502 and the first photoresist layer 504 in sequence.
[0077] In FIG. 5A , the scan line trench 506 can be ...
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