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A Ge adulterated AZO transparent conductive film and its making method

A transparent conductive film and margin technology, applied to the conductive layer on the insulating carrier, metal/alloy conductors and other directions, can solve the problems of AZO film porosity, loose AZO film, unstable electrical conductivity, etc., to improve electrical conductivity and Visible light transmittance, good adhesion, dense and complete surface

Inactive Publication Date: 2010-06-02
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the unstable conductivity of the AZO film when it is used for a long time, the AZO film fails
[0004] At present, the sol-gel method is generally used to prepare AZO films. Although the sol-gel method is easy to control the composition change, the AZO film is prone to pore defects during the film production process, resulting in loose AZO films and poor electrical conductivity.

Method used

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  • A Ge adulterated AZO transparent conductive film and its making method
  • A Ge adulterated AZO transparent conductive film and its making method
  • A Ge adulterated AZO transparent conductive film and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Example 1: AZO transparent conductive film with a thickness of 750nm and a Ge content of 1.24wt%

[0030] Step 1: Substrate pretreatment

[0031] Select a 15mm×5mm×0.9mm ordinary glass sheet, and ultrasonically clean it in 95% acetone for 10 minutes, then perform ultrasonic surface cleaning in 99% alcohol for 10 minutes, and then blow dry to obtain the substrate;

[0032] Step 2: Select the target

[0033] Select a ZnO target material of φ60mm×5mm, and the ZnO target material contains 2wt% Al 2 o 3 ,, the first target;

[0034] Select a 1mm×1mm×0.2mm Ge sheet with a purity of 99.999%, that is, the second target material, for use;

[0035] The third step: radio frequency magnetron sputtering film formation

[0036] The substrate obtained in the first step is installed on the anode plate of a magnetron sputtering apparatus (JGP560BV type ultra-high vacuum multi-target magnetron sputtering coating machine of China Shenyang Instrument Development Center Co., Ltd.); ...

Embodiment 2

[0049] Example 2: AZO transparent conductive film with a thickness of 500 nm and a Ge content of 0.5 wt %

[0050] Step 1: Substrate pretreatment

[0051] Select a 15mm×5mm×0.9mm ordinary glass sheet, and ultrasonically clean it in 95% acetone for 5 minutes, then perform ultrasonic surface cleaning in 99% alcohol for 5 minutes, and then blow dry to obtain the substrate;

[0052] Step 2: Select the target

[0053] Select a ZnO target material of φ60mm×5mm, and the ZnO target material contains 2wt% Al 2 o3 , the first target;

[0054] Select a 1mm×1mm×0.2mm Ge sheet with a purity of 99.999%, that is, the second target material, for use;

[0055] The third step: radio frequency magnetron sputtering film formation

[0056] The substrate obtained in the first step is installed on the anode plate of a magnetron sputtering apparatus (JGP560BV type ultra-high vacuum multi-target magnetron sputtering coating machine of China Shenyang Instrument Development Center Co., Ltd.);

[...

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Abstract

The invention discloses an AZO transparent conductive film adulterated with Ge and a preparation method thereof. The transparent conductive film is prepared on a glass uropatagia by adopting RF magnetic control in sputtering and codeposition mode. The AZO transparent conductive film adulterated with Ge is composed of0.5-2.5wt% of GE, 1.05wt% of Al, 86.3wt% of Zn and a small quantity of O. The room-temperature specific resistance of the transparent conductive film of the invention is 7-8*10<-4> omega*cm. The average transmission in a range of visual light from 400nm to 800nm reaches 80%-90%. The transparent conductive film made through the RF magnetic control in sputtering and codeposition mode of the invention does not alter crystal structure of ZnO when being adulterated with the Ge simple substance, and the transparent conductive film has good (002) crystal orientation.

Description

technical field [0001] The present invention relates to a kind of conductive film and the preparation method thereof, more particularly, refers to a method of depositing Ge, Zn, Al and O on the substrate by adopting radio frequency magnetron sputtering co-deposition process on the glass substrate . Background technique [0002] Transparent conductive oxide (TCO) belongs to semiconductor optoelectronic materials. The TCO thin film made of it has a high band gap and shows the characteristics of ultraviolet cutoff, high transparency of visible light, high reflection of infrared region and low resistivity. . These characteristics determine that it has a very broad application in many aspects such as solar cells and liquid crystal displays. [0003] ZnO-based TCO thin films are characterized by low cost, non-toxicity, and high stability, and have attracted widespread attention. Pure ZnO is a wide bandgap (about 3.2ev) direct bandgap semiconductor with a relatively high resisti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B1/02C23C14/35
Inventor 毕晓昉陈骆叶明伟
Owner BEIHANG UNIV
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