Semiconductor underlay and production method and its application on silicon and extension of insulator

Abstract

The invention relates to a semi-conductor substrate, which comprises a covering layer which is positioned on the top layer and a cave layer which is positioned below the covering layer and a supporting layer which is positioned below the cave layer. The semi-conductor substrate with a special structure is prepared by two methods, that is, an ion injection and an anode oxidization. At the same time, the invention further discloses a method for preparing a silicon material on a generalized bonded thin insulator by the semi-conductor substrate, and a method for using the semi-conductor substrate for material extension as an extending substrate. Compared with the prior art, the invention has the advantage that the cave layer in the semi-conductor substrate can help release interlayer stress, thus acquiring perfect single crystal material.

Description

technical field [0001] The invention belongs to the manufacturing field of microelectronics and solid electronics, and silicon-based integrated optoelectronic device materials. Background technique [0002] Silicon on insulator (that is, SOI-silicon on insulator) has the advantages of high speed, low power, and radiation resistance. It has important application prospects in aerospace, military electronics, portable communications, and automotive electronics. It is considered to be the twenty-first The silicon integrated circuit technology of the century has attracted much attention (J.P.Colinge, Silicon on Insulator Technology, Material to VLSI, Kulwer Academic Publication 1991). With the development of automotive electronic integrated circuits, audio power amplifier integrated circuits, lighting, etc., the demand for power devices is becoming more and more extensive. Because of its good insulation properties, SOI substrates have a particularly promising application prospect...

AI Technical Summary

Problems solved by technology

[0005] For the process steps of high-temperature strengthening in the prior art, there is a problem that a large amount of residual thermal stress is introduced into the top silicon layer, and the existence of thermal stress will have a harmful impact on the performance of the device, and in the heterogeneous epitaxy process of semiconductor materials, How to release the stress caused by lattice mismatch, the purpose of the present invention is to: provide a semiconductor substrate with embedded hole layer, use the semiconductor substrate as an epitaxial substrate for the epitaxy of gallium nitride, silicon germanium and other materials, and As a support substrate for the fabrication of generalized bonding thinned silicon-on-insulator materials with small residual thermal stress in the top silicon layer of the generalized silicon-on-insulator material

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