Surface in-situ metallization method based on cationic conductive glass

A conductive glass and cationic technology, applied in the field of surface metallization, can solve the problems of high bonding temperature, poor electrical and thermal conductivity of the bonding area, difficulty in adapting to high-power and high-integration device packaging requirements, etc., to reduce difficulty and reduce residual thermal stress , Good effect of promoting application value

Active Publication Date: 2021-08-03
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Interposer-free bonding usually requires a higher bonding temperature (above 400°C for anodic bonding, and above 800°C for direct bonding), and the electrical and thermal conductivity of the bonding area is poor, making it difficult to adapt to the packaging of high-power and highly integrated devices Require

Method used

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  • Surface in-situ metallization method based on cationic conductive glass
  • Surface in-situ metallization method based on cationic conductive glass
  • Surface in-situ metallization method based on cationic conductive glass

Examples

Experimental program
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Effect test

Embodiment 1

[0029] A surface in-situ metallization method based on cationic conductive glass, which is used to assist the brazing or bonding surface metal layer of cationic conductive glass, which is formed by the cationic reaction in the cationic conductive glass after being activated by the recombination field, without surface coating , sputtering or ion implantation, and proceed as follows:

[0030] Step 1: Select AgⅠ-Ag with high conductivity and low ionization activation energy 2 O-B 2 o 3 The silver ion conductive glass is used as the in-situ metallization sample on the surface. The preparation process is as follows: prepare chemically pure grade AgⅠ, Ag 2 O and B 2 o 3 As a raw material, the material is 60mol%AgI, Ag 2 O / B 2 o 3 The ratio of =3 is fully mixed, placed in a quartz glass tube with one end open, heated in an electric furnace to 480~800°C to melt, and then the melt is cooled by double rollers, during which the pressure of the double rollers is adjusted reasonably...

Embodiment 2

[0036] A surface in-situ metallization method based on cationic conductive glass, which is used to assist the brazing or bonding surface metal layer of cationic conductive glass, which is formed by the cationic reaction in the cationic conductive glass after being activated by the recombination field, without surface coating , sputtering or ion implantation, and proceed as follows:

[0037] Step 1: Select AgⅠ-Ag with high conductivity and low ionization activation energy 2 O-B 2 o 3 The silver ion conductive glass is used as the in-situ metallization sample on the surface. The preparation process is as follows: prepare chemically pure grade AgⅠ, Ag 2 O and V 2 o 5 As a raw material, the material is 50mol%AgI, Ag 2 O / V 2 o 5 The ratio of =0.67:0.33 is fully mixed, weigh 5g of mixed powder in a 250mL agate ball mill jar, put 10 agate grinding balls with a diameter of 10mm, and add 10mL of acetone as a process control agent, and use it in a planetary ball mill at a speed o...

Embodiment 3

[0043] A surface in-situ metallization method based on cationic conductive glass, which is used to assist the brazing or bonding surface metal layer of cationic conductive glass, which is formed by the cationic reaction in the cationic conductive glass after being activated by the recombination field, without surface coating , sputtering or ion implantation, and proceed as follows:

[0044] Step 1: Select Cu with high conductivity and low ionization activation energy 2 O-Al 2 o 3 -SiO 2 Copper ion conductive glass is used as the surface in-situ metallization sample, and the preparation process is as follows: according to 12.5%CuO-12.5%Al 2 o 3 -75%SiO2 2 The molar ratio of the ball was ground at a speed of 400rpm for 2h, and put into Al 2 o 3 Heat the melt in a crucible to 1550°C to melt, and then cool the melt through double rollers, during which the pressure of the double rollers is adjusted reasonably to control the cooling rate of the melt to obtain thin flake glass...

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Abstract

The invention discloses a surface metallization method based on the migration, reaction and in-situ growth of cations in a cation conductive glass under the compound action of temperature field and electric field. The method is as follows: the cationic conductive glass and the metal foil are docked between the positive and negative electrodes in the vacuum furnace, a certain axial pressure is applied and heated, the cations in the glass are activated and ionized at high temperature, and a DC electric field is applied, and the cations form an orientation Migrate and transport, enrich on the surface of the negative side of the glass, and undergo redox reaction with free charge neutralization to form a simple substance, and then grow in-situ in the surface micro-nano structure to form a metal layer, and undergo diffusion or eutectic reaction with the docking metal foil, Avoid contact of metal layers with electrodes and increase metallization thickness. The advantage of adopting the present invention is that the metal layer grows closely on the glass surface, the connection strength is high, the spreading and wetting performance of the metal layer on the glass surface after melting is excellent, and the welding and packaging performance of the glass are significantly improved.

Description

technical field [0001] The invention relates to the surface metallization technology of glass before brazing or eutectic bonding, in particular to a surface in-situ metallization method of cationic conductive glass under the compound action of temperature field and direct current electric field. Background technique [0002] The connection of glass and metal (semiconductor) materials is widely used in integrated circuit manufacturing, multifunctional chip integration, and packaging of MEMS sensors, microfluidic chips and semiconductor chips. With the development of packaging technology towards high power, high integration and 3D vertical interconnection, the limit size, integration, heat dissipation and reliability of glass and metal or semiconductor material bonding technology are increasingly stringent and high comprehensive performance requirements. [0003] Commonly used bonding methods for glass and heterogeneous materials include anodic bonding, direct bonding and eut...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C27/04C03C6/06C03C6/00C03C3/23C03C3/32C03C4/14
Inventor 张鹏焦少妮胡利方王琪牛亚楠王波
Owner TAIYUAN UNIV OF TECH
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