Laser modeling method for semiconductor material micro-nano multi-scale function surface
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU UNIV
- Publication Date
- 2008-07-16
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to the technical field of micro-nano material preparation and laser micromachining, in particular refers to the micro-nano multi-scale microstructure processing on the surface of semiconductor materials by designing different process schemes and adopting femtosecond laser micromachining technology, and making the material surface The method of obtaining hydrophilic or hydrophobic properties can be applied to various semiconductor materials such as silicon, titanium dioxide, and gallium nitride. Background technique
[0002] Semiconductors are widely used in science and technology, industrial and agricultural production and life. Among them, semiconductor devices made of silicon have better high temperature resistance and radiation resistance, and are especially suitable for making high-power devices. Therefore, silicon has become the most widely used additive material, and most of the current integrated circuits are made o...