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Method for making optical spring based on single polar semiconductor nano-strip

A manufacturing method and semiconductor technology, applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve problems such as measurement difficulties, and achieve the effect of high positioning accuracy and large photostriction

Inactive Publication Date: 2011-04-06
XIANGTAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, limited by low-scale characterization techniques, it is difficult to measure the photomechanical properties of low-dimensional II-VI semiconductor nanostructures, especially the photostrictive properties and the resulting photosprings have not been reported so far.

Method used

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  • Method for making optical spring based on single polar semiconductor nano-strip
  • Method for making optical spring based on single polar semiconductor nano-strip
  • Method for making optical spring based on single polar semiconductor nano-strip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The method for manufacturing a light spring based on a single polar zinc oxide semiconductor nanoribbon in embodiment 1 specifically includes the following steps:

[0035] (1) Put high-purity (99.99%) powdered zinc oxide into the quartz boat in the furnace tube, and the argon flow direction flows from the quartz boat to the nearby aluminum plate used for nanoribbons growth. The furnace tube is 0.48 standard atmospheres. The rate is 50 cubic centimeters per minute. Then the temperature in the furnace tube was heated to 1400 degrees Celsius with a heater, and argon gas was used as the carrier of zinc oxide to grow for 2 hours. The zinc oxide nanobelt flocculent material was prepared without catalyst.

[0036] (2) The substrate is selected as a single crystal silicon wafer compatible with standard semiconductor processes, the silicon wafer is polished on one side, and the polished surface is a (001) crystal plane.

[0037] (3) Using X-ray diffractometer D500, the X-ray diffract...

Embodiment 2

[0050] The method for manufacturing a light spring based on a single polar zinc sulfide semiconductor nanobelt in Embodiment 2 specifically includes the following steps:

[0051] (1) Put high-purity (99.9%) powdered zinc sulfide into the quartz boat in the furnace tube, and the argon flow direction flows from the quartz boat to the nearby aluminum plate for nanoribbons growth. The gas flow time is 4 hours for purification Oxygen in the furnace tube. The inside of the furnace tube is 0.48 standard atmospheres, and the air flow rate is 50 cubic centimeters per minute. Then the temperature in the furnace tube is heated to 1050 degrees Celsius with a heater, and argon is used as the carrier of zinc sulfide to grow for 2 hours. The zinc sulfide nanobelt flocculent material was prepared without catalyst.

[0052] (2) The same as the step (2) in Example 1.

[0053] (3) The zinc sulfide X-ray diffraction spectrum analysis process is the same as step (3) in Example 1. There are three main...

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Abstract

The invention discloses a method for manufacturing an optical spring based on individual polar semiconductor nanometer band, including the following steps: 1) a semiconductor powder is adopted as the material to prepare a floccule of semiconductor nanometer band; 2) volatile solution is used as dispersing liquid to dissolve the floccule of semiconductor nanometer band in the dispersing agent, then the floccule of the semiconductor nanometer band is dispersed into individual polar semiconductor nanometer band suspending in the dispersing fluid after being vibrated by the ultrasound; 3) a monocrystalline silicon piece which forms a silicon dioxide insulating layer in the air is adopted as a substrate; 4) the dispersing liquid with suspending individual polar semiconductor nanometer band is dropped on the substrate and an individual nanometer band with random distribution is obtained after the natural volatilization; 5) the nanometer probe technology is used for selecting the individual polar semiconductor nanometer band of a flat substrate which has the maximum spontaneous polarization and piezoelectric effect along the vertical direction as the optical spring based on the individual polar semiconductor nanometer band. The invention has the advantages that: the optical spring based on the individual II-IV family semiconductor piezoelectricity nanometer band has large flexible photoinduced and the photoinduced strain capacity can reach 2%; the optical spring has high positioning accuracy, is suitable for the technical requirement of the micro / nano-electron mechanical system and belongs to the field of high and new technology.

Description

technical field [0001] The invention relates to a manufacturing method of a single polar semiconductor nano-belt optical spring. Background technique [0002] The application of nanoribbon optical springs in the field of micro / nano electromechanical systems is expected to make components miniaturized and intelligent, and improve the integration of micro / nano electromechanical systems. Some polar semiconductor nanostructures change size or shape when exposed to light, and this triggering of mechanical deformation without direct contact holds promise for springs that can be operated remotely. The rapid development of micro / nanoelectronic technology leads to the emergence of microelectromechanical systems, and the goal of micro / nanomechanical systems is to study components and systems with new principles and new functions through continuous miniaturization and high integration of the system. Therefore, it is of great significance to explore the potential application of nanostr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00
Inventor 郑学军陈义强王甲世姜传斌龚伦军
Owner XIANGTAN UNIV
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