In-situ corrosion method for reducing HVPE GaN thin film dislocation density

Abstract

The invention provides a method of in situ etched to reduce HVPE GaN film dislocation density, in hydride gas phase epitaxial growth system, first, the GaN film grows on the substrate, and then the film surface in the GaN thick film is corroded by method of HCI corrosion, the step of corrosion is the GaN film is stopped growing, the growth temperature is reduced to 700-950[deg.] C, and then passes over the HCI gas which of flux is increased from 5sccm to 50sccm to in situ etched for HVPE GaN about 3-60 minutes; then, the growth temperature is increased to initial 1000-1100[deg.] C, and the HVPE of GaN is grown continuely; repeat said processes of corrosion and regrow, until grows the appropriate thickness of the GaN film.

Description

1. Technical field [0001] The invention relates to an epitaxy method and process for obtaining a GaN thin film and a substrate material with lower overall dislocation density in a hydride vapor phase epitaxy (HVPE) growth system. 2. Background technology [0002] III-V nitride materials (also known as GaN-based materials), mainly GaN, InGaN, and AlGaN alloy materials, are new semiconductor materials that have received international attention in recent years. Gap, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity and other superior properties make it the best choice for the preparation of short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, and high-temperature microelectronic devices. Material. [0003] Due to the limitation of the physical properties of GaN itself, the growth of GaN bulk single crystal has great difficulties and has not yet been ...

AI Technical Summary

Problems solved by technology

[0004] However, despite significant progress in lateral epitaxy, the dislocation density in GaN materials has not yet been significantly reduced to a level that meets the requirements of GaN optoelectronic devices and enables large-scale industrial applications.

Since the lateral epitaxy in the past used the method of opening "windows" in the GaN seed layer, the dislocation density of the GaN film in the epitaxial film does not decrease as a whole, but is related to the distribution of "windows". This reduces the utilization efficiency of the film

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