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Optical emission interferometry for PECVD using a gas injection hole

A technology for gas and gas distribution, applied in the direction of measuring devices, optical devices, electrical components, etc., can solve the problem of not providing benefits, etc.

Active Publication Date: 2008-08-13
UNAXIS USA
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Problems solved by technology

[0023] The benefits of the present invention are not provided in the prior art

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  • Optical emission interferometry for PECVD using a gas injection hole
  • Optical emission interferometry for PECVD using a gas injection hole
  • Optical emission interferometry for PECVD using a gas injection hole

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[0066] Accurate measurement of film thickness in real time allows the process to be terminated when a predetermined film thickness has been achieved. This is shown in Figure 7, where the process was terminated when the target film thickness of 7500 Ȧ was achieved. A deposition rate of 498.8 A / min was determined using linear regression analysis.

[0067] An advantage of terminating processes based on this technique relative to conventional methods of terminating by time is that better run-to-run repeatability is achieved, resulting in devices with more consistent performance. From one run to another, the deposition rate will normally vary slightly due to film buildup, which will change the reactor characteristics. Terminating the process at a fixed time inevitably results in film thickness, which also varies from run to run. Additionally, the system must be periodically cleaned using a plasma cleaning process to remove the accumulated film. After this procedure, the depositi...

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Abstract

The present invention provides a method and apparatus for improving optical sensing of a plasma process through the use of a fiber optic sensor placed within a standard showerhead hole of a standard gas showerhead positioned in an upper electrode of a plasma system during the plasma processing of a substrate. A film property can be calculated based on the measured plasma emission from the surface of the substrate. The film property can be film deposition rate, refractive index, film thickness, etc. Based on the measured film property, the plasma processing of the substrate can be adjusted and / or terminated. In addition, a window is provided that is positioned in the upper electrode assembly for viewing the plasma emission through the standard showerhead hole.

Description

[0001] Cross References to Related Applications [0002] This application is related to, and claims priority to, U.S. Provisional Patent Application Serial No. 60 / 709,469, filed August 18, 2005, entitled "Optical Emission Interferometry for PECVD using a Gas InjectionHole," which is filed as References are included here. technical field [0003] The present invention relates to plasma processing equipment, and more particularly, to plasma reactor systems having optical monitoring and control systems for monitoring and controlling plasma processing. Background technique [0004] Plasma processing is widely used in the fabrication of semiconductor devices and silicon-based microcircuits. They are also used in other non-semiconductor devices such as waveguide and optical device fabrication and many non-silicon based devices (devices based on III-V materials such as GaAs). [0005] Plasma treatments are generally divided into two types, etching and deposition. In plasma etchi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32C23C16/52C23C16/505G01B11/06
CPCG01B11/0658C23C16/52G01B11/0683H01J37/32935H01J37/32972
Inventor 大卫·约翰逊
Owner UNAXIS USA
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