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Solid-state imaging device and camera

A solid-state imaging device and pixel technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., to achieve the effects of improving sensitivity, suppressing dark current, suppressing and white point

Active Publication Date: 2008-08-20
SONY CORP
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Problems solved by technology

When comparing a CCD image sensor and a MOS image sensor, a CCD image sensor may require a high driving voltage to deliver signal charges, therefore, the power supply voltage for a CCD image sensor may be higher than that of a MOS image sensor

Method used

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Embodiment Construction

[0028] The conversion efficiency of photoelectric conversion in converting electric charge into signal voltage has been studied. Specifically, the photoelectrically converted charges are converted into voltages and output as pixel signals from circuits of the MOS image sensor. Therefore, even when the number of electrons (charge amount) per pixel is small, if the conversion efficiency of the signal voltage representing each charge is increased, the number reduction caused by the reduction in the area of ​​the photodiode can be obtained compensate.

[0029] The conversion efficiency η is defined by the following equation (1). The unit is μV / e:

[0030] [equation 1]

[0031] η = q C FD G [ μV / e ]

[0032] q: amount of charge per electron

[0033] C FD : The total capacitance associated with the floating diffusion

[003...

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Abstract

A solid-state imaging device and camera are provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for element isolation regions other than the shallow trench element isolation region.

Description

technical field [0001] The present invention relates to a solid-state imaging device and a camera, and specifically to a MOS (Metal Oxide Semiconductor) solid-state imaging device and a camera. Background technique [0002] Solid-state imaging devices include charge-transfer solid-state imaging devices represented by CCD (Charge Coupled Device) image sensors and amplified solid-state imaging devices represented by MOS (Metal Oxide Semiconductor) image sensors such as CMOS (Complementary Metal Oxide Semiconductor) image sensors. Solid-state imaging devices. When comparing a CCD image sensor and a MOS image sensor, a CCD image sensor may require a high driving voltage to transfer signal charges, and therefore, a power supply voltage for a CCD image sensor may be higher than that of a MOS image sensor. [0003] Therefore, mobile phone units including cameras, PDAs (Personal Digital Assistants), and other mobile devices generally use CMOS image sensors as solid-state imaging de...

Claims

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Application Information

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IPC IPC(8): H01L27/146H04N5/335H04N5/361H04N5/369H04N5/374H04N5/3745
CPCH01L27/14609H01L27/1463H01L27/14689H01L27/1461H01L27/14654H01L27/14603H01L27/14643H04N25/62H04N25/63H04N25/76H04N25/75
Inventor 糸长总一郎大屋雄
Owner SONY CORP
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