Press welding method for semiconductor extension film

Abstract

The invention discloses a semiconductor epitaxial wafer press-welding method, the method does not need to heat the press-welding method through the way of thermal resistance heating, thus preventing the press-welding method in the way of thermal resistance heating from effecting ohmic contact performance of the epitaxial wafer because of thermal diffusion. The method avoids farthest deterioration of quality of epitaxial wafer caused by the way of thermal resistance heating. The invention comprises the following steps: location steps: placing welding epitaxial wafer and substrate on a worktable of folder device, causing welded surface of the epitaxial wafer and the substrate location-docking through a location device; electromagnetic-welding steps: connecting electromagnetic coil, imposing folder pressure on the epitaxial wafer and the substrate through the folder device of welding body, heating the press-welding method of the epitaxial wafer or the substrate through electromagnetic wave which is sent out by electromagnetic coil, thus causing the epitaxial wafer and the substrate press-welding together. The invention can increase the production rate because of fast heating rate and cooling rate obviously.

Description

technical field [0001] The invention relates to a pressure welding method for semiconductor epitaxial wafers. Background technique [0002] InGaAlN semiconductor light-emitting devices are widely used in full-color large-screen displays, traffic lights, backlights, solid-state lighting, etc. Commonly used substrate materials for InGaAlN semiconductor luminescent materials are sapphire, silicon carbide and silicon. When the InGaAlN film grown on the original substrate is made into a light-emitting device, there will be the following disadvantages: low utilization rate of the light-emitting material, poor heat dissipation, and the P-type transparent conductive layer has a certain absorption effect on light, thus affecting the photoelectricity of the device. There is a certain impact on performance. Using a combination of epitaxial wafer bonding (wafer bonding) and wet lift-off or laser lift-off, the InGaAlN film grown on the original substrate is transferred to a new substra...

AI Technical Summary

Problems solved by technology

When the InGaAlN film grown on the original substrate is made into a light-emitting device, there will be the following disadvantages: low utilization rate of the light-emitting material, poor heat dissipation, and the P-type transparent conductive layer has a certain absorption effect on light, thus affecting the photoelectricity of the device. There is a certain impact on performance

However, the metal has a large specific heat capacity, so its heating rate is slow and the heating time is long, which makes the bonding metal easily diffuse to the surface of GaN and damage the ohmic contact performance of the epitaxial wafer

For cooling, if gas cooling or liquid cooling is used, the metal heater will generate a large internal stress and cause deformation; if gas cooling or liquid cooling is not used, the cooling time will be very long, which will not only affect the ohmic contact, but also affect production. efficiency

Repeated heating of the metal heater will cause thermal fatigue, which will deform the heater and cause cracks

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