Method for synthesizing non-metal catalyst self-organizing growth carbon nano-tube with chemical vapor deposition

A technology of chemical vapor deposition and carbon nanotubes, which is applied in the direction of carbon nanotubes, nanotechnology for materials and surface science, nanocarbon, etc., can solve the problems of high production cost, high growth temperature, and many impurities in the product, and achieve Realize the effects of continuous production, low preparation cost and high product purity

Inactive Publication Date: 2008-09-24
CENT SOUTH UNIV
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Purification of the product is currently the main means to remove the residual catalyst particles in carbon nanotubes and obtain pure carbon nanotubes. However, the purification process increases the production cost and the yield is low. At the same time, it may cause damage to the structure of carbon nanotubes or introduce new Impurities; the use of catalyst-free preparation technology is another way to obtain pure carbon nanotubes, such as: non-catalytic arc discharge method, non-catalytic flame method, thermal plasma sputtering and other technologies, but the characteristics of carbon nanotubes prepared by arc discharge method are The growth is fast, and the process parameters are easy to control, but the growth temperature is high, the equipment is complex, the product has many impurities, the yield is low, and it is difficult to purify, so it is not suitable for mass production; the product prepared by the flame method contains a large amount of by-products such as carbon particles, soot particles, and carbon nanofibers. , difficult to purify; thermal plasma sputtering technology equipment is complex, high production cost, not suitable for industrial production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for synthesizing non-metal catalyst self-organizing growth carbon nano-tube with chemical vapor deposition
  • Method for synthesizing non-metal catalyst self-organizing growth carbon nano-tube with chemical vapor deposition
  • Method for synthesizing non-metal catalyst self-organizing growth carbon nano-tube with chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Such as figure 1 , the equipment used in this example is a horizontal vacuum tube furnace. Under the protection of the carrier gas, the temperature is raised to 940 ° C ~ 980 ° C, and the carbon source gas is introduced. The carbon source is cracked when it flows through the high temperature area, and the substrate in the low temperature area deposition to form carbon nanotubes. Such as figure 2 , r represents the diameter of the corundum tube of the horizontal vacuum tube furnace. There is a temperature gradient between the central part of the high-temperature furnace cavity used in this embodiment and the position where the substrate is placed. When the high-temperature furnace is heated to the programmed temperature (such as 950°C , the temperature at the center of the cavity is 920°C (30°C lower than the programmed temperature, as shown in Table 1), and the temperature at the position where the substrate is placed is about 650°C to 750°C. This temperature gradient...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for synthesizing a metal free catalyst self-assembled growing carbon nano-tube by chemical vapor deposition. The invention is characterized by firstly raising the temperature of a horizontal vacuum tube high temperature furnace into 940 to 980 DEG C and preserving the temperature under the protection of carries gases, then pumping the mixed gas of carbon source gas and the carries gases; the decomposing product of the carbon source gas is deposited on an underlay in the low temperature area of the high temperature furnace to form the self-assembled growing carbon nano-tube; the carbon source gas is gaseous compound containing carbon. The carrier gases are the mixed gas of one or two or a plurality of nitrogen, hydrogen or argon. As no metal catalysts are used, the carbon nano-tube prepared by the invention contains no metal catalysts, thus having the advantages of high output purity, low manufacture cost and being hopeful to realize continuous manufacture.

Description

technical field [0001] The invention relates to a method for synthesizing self-organized carbon nanotubes by chemical vapor deposition under the condition of no metal catalyst. Background technique [0002] As one of the most potential materials in nanomaterials, carbon nanotubes have received extensive attention in the research of their preparation technology. At present, the preparation methods of carbon nanotubes mainly include arc discharge method, laser evaporation method, and catalyst-assisted chemical vapor deposition method. High, complicated equipment, many impurities in the product, low yield and difficult to purify, not suitable for mass production; the quality of the product prepared by laser evaporation is high, but the yield is low; the catalyst-assisted chemical vapor deposition method is to use the free carbon produced by the cracking of hydrocarbons Ions, a method of forming carbon nanotubes by precipitation at one end of the catalyst. Compared with other m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/52
CPCC23C16/26B82Y30/00B82Y40/00C01B31/0226C01B32/16
Inventor 唐元洪李晓川林良武徐海峰黄伯云
Owner CENT SOUTH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products