Gate sensitive triggering unidirectional controlled silicon chip and production method thereof

Abstract

The invention discloses a gate sensitive trigger one-way silicon controlled rectifier (SCR) chip which promotes the temperature characteristics of products and improves batch-to-batch consistency of trigger current IGT. The invention also provides a method for producing the gate sensitive trigger one-way SCR chip; and the method has the advantages of simple process, convenient processing and improving performance of products. The gate sensitive trigger one-way SCR chip comprises a gate electrode G, a cathode electrode K, an anode electrode A, an N<+> emitter region, an N-shaped long base region, a P-shaped short base region and a P-shaped anode region; and an external groove is etched around the chip. The SCR chip is characterized in that a section of internal groove is arranged in the chip, the internal groove and the external groove form a strip-shaped resistance arm, the resistance arm forms a diffused resistor RGK with a larger resistance value by utilizing the P-shaped short baseregion of the N<+> emitter region, one end of the diffused resistor RGK is connected with the gate electrode G by an internal lead of the chip, and the other end is connected with the cathode electrode K by the internal lead.

Description

technical field [0001] The invention relates to a semiconductor chip, in particular to a gate sensitive trigger one-way thyristor chip and a production method thereof. Background technique [0002] An important characteristic of the gate sensitive trigger one-way thyristor is that the gate trigger signal required for use is very small, generally its trigger current I GT The index is ≤200uA, the products sold on the market I GT Generally 5-40uA. (1) There is a "trigger current I" in the manufacturing process GT Poor consistency and poor control" problem: the I of each batch of products in the manufacturing process GT The discreteness is very large, and the repeatability between batches is also very poor; when customers require I GT = 20-40uA or I GT = 30-50uA or I GT = 40-60uA products, the manufacturer can not meet the requirements; and the customer's favorite is I GT = 20-40uA or I GT = 30-50uA or I GT = 40-60uA product. (2) There are many uses that require I GT ...

AI Technical Summary

Problems solved by technology

(1) There is a "trigger current I" in the manufacturing process GT Poor consistency and poor control" problem: the I of each batch of products in the manufacturing process GT The discreteness is very large, and the repeatability between batches is also very poor; when customers require I GT = 20-40uA or I GT = 30-50uA or I GT = 40-60uA products, the manufacturer can not meet the requirements; and the customer's favorite is I GT = 20-40uA or I GT = 30-50uA or I GT = 40-60uA products

(2) There are many uses that require I GT = 40-60uA and I GT = 60-80uA products, the current situation cannot meet the requirements

(3) there is a restriction problem of using environment: I GT It decreases with the increase of temperature, and increases with the decrease of temperature, so there is a temperature limit when using it. The junction temperature Tj generally given by the manufacturer is -40 ° C ~ 110 ° C, and the use of customer control The temperature (shell temperature) range is generally -20°C to 65°C; this operating temperature range is not wide enough, which limits the use

(4) At present, when the sensitive trigger one-way thyristor chip is produced domestically or abroad, there is no resistance between the gate (G) and the cathode (K), and the user needs to add an external resistance when using it.

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