Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Antistatic TFT substrate and processing technique thereof

A processing technology and anti-static technology, applied in the direction of metal material coating process, circuits, electrical components, etc., can solve the problems of reducing the service life of the display, broken and leaking TFT substrate, fragile and other problems, and achieve the effect of good anti-static function.

Inactive Publication Date: 2009-01-21
SHENZHEN LEAGUER OPTRONICS
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the lack of anti-static treatment on the traditional TFT substrate, it is easy to absorb dust in the air when it is processed into a display, and the surface is easy to get dirty, which affects the clarity of the display panel.
In addition, since the TFT substrate is an ultra-thin glass, it is fragile
Usually, in order to carry out anti-static treatment on glass, the method of vacuum coating is mainly used. The traditional vacuum coating technology is coated at a higher temperature, that is, the temperature of the coating exceeds 100 ° C, and the coating at high temperature, due to the TFT The thin and brittle substrate will not only cause the TFT substrate to break and leak, but also cause the TFT substrate to age after coating, which will reduce the service life of the display and affect the overall quality of the display.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment is a sputtering method with two target positions, and the process steps are as follows:

[0024] The TFT substrate is cleaned and thermally dried before coating, and then the film is mounted on the rack. The LHKJ vertical automatic continuous magnetron sputtering coating machine is used to coat the indium tin oxide film, that is, the ITO film. The coating material is indium oxide Tin SnO2, the ratio of indium to tin is 98:2, the heating temperature of the substrate is 70℃, the transmission frequency of the coating chamber is 18HZ, and the heating time is 15 minutes. Sputter coating is carried out according to the following method: the total pressure is 0.5Pa, the use of spacers After the two target positions are coated, the substrate temperature rises from 70°C to about 85°C. After the cooling of the two target positions, the substrate temperature drops from 85°C to 70°C, and then the second layer of indium tin oxide film is plated. The thickness of the indi...

Embodiment 2

[0027] This embodiment is a two-target sputtering method, and its process steps and parameters are as follows:

[0028] The TFT substrate is cleaned and thermally dried before coating, and then the film is mounted on the rack. The LHKJ vertical automatic continuous magnetron sputtering coating machine is used to coat the indium tin oxide film, that is, the ITO film. The coating material is indium oxide Tin SnO2, the ratio of indium to tin is 98:2, the substrate heating temperature is 60℃, and the heating time is 20 minutes. The transmission speed of the coating chamber is 16HZ. Sputter coating is carried out according to the following method: the total pressure of the coating chamber is 0.4Pa, Use two separate targets for coating. The substrate temperature rises from 60°C to about 75°C. After the two target positions are cooled, the substrate temperature drops from 75°C to 60°C, and then the second layer of indium tin oxide film is plated. Layer, the film thickness is controlled i...

Embodiment 3

[0031] This embodiment is a three-target sputtering method, and its process steps and parameters are as follows:

[0032] The TFT substrate is cleaned and dried before coating, and then the film is mounted on the rack. The LHKJ vertical automatic continuous magnetron sputtering coating machine is used to coat the indium tin oxide film. The coating material is indium tin oxide SnO2, The ratio of indium to tin is 98:2. The heating temperature of the substrate is 50℃, the heating time is 25 minutes, and the transmission speed of the coating chamber is 15HZ. Sputter coating is carried out according to the following method: the total pressure of the coating chamber is 0.3Pa, using spacers The three targets are coated, the substrate temperature rises from 50°C to about 65°C, after the cooling of the two target positions, the substrate temperature drops from 65°C to 50°C, and then the second layer of indium tin oxide film is plated. The two target positions are cooled, the substrate temp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A TFT base-plate belongs to the glass technical field, in particular to the processing technical field of a TFT base-plate which is used for a display, wherein an indium-tin oxide film layer with the antistatic function is arranged on the TFT base-plate, the film plating material of the indium-tin oxide film layer with the antistatic function is indium-tin oxide SnO2, the proportion of the indium and the tin is 98:2, the transmittance is more than 88 percent, the sheet resistance is between 600-1200 ohm / square,the thickness of the indium-tin oxide film layer with the antistatic function is 80+ / -20, and the sheet resistance is between 700-1150 ohm / square. The invention adopts the method of low temperature, multi-target and discontinuous sputtering to plate the indium-tin oxide film layer with high transmittance and high sheet resistance on the TFT base-plate, namely ITO film, since the resistance value of the ITO film is big, thereby the TFT base-plate has good antistatic function after the film is plated, and dust is not easily absorbed, simultaneously, the breaking of the TFT base-plate during the film plating and the aging of the TDT base-plate after the film plating are prevented.

Description

Technical field: [0001] The invention relates to a TFT substrate, which belongs to the technical field of glass, in particular to the technical field of processing TFT substrates for displays. Background technique: [0002] At present, TFT substrates have been widely used for liquid crystal display panels, because TFT-type displays have relatively high contrast, fast response speed, and wide viewing angles. However, since the traditional TFT substrate is not treated with anti-static treatment, it is easy to absorb dust in the air when it is processed into a display, and the surface is easily dirty, which affects the clarity of the display panel. In addition, because the TFT substrate is ultra-thin glass, it is fragile. Generally, in order to conduct anti-static treatment on glass, vacuum coating is mainly used. The traditional vacuum coating technology is coated at a higher temperature, that is, the temperature of the coating exceeds 100 ℃, and the coating is performed at a high ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L27/12H01L23/60H01L21/02H01L21/336H01L21/84G02F1/1362G02F1/1333C23C14/56C23C14/54C23C14/35C23C14/08
Inventor 胡安春温景成吴永光董坚
Owner SHENZHEN LEAGUER OPTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products