Antistatic TFT substrate and processing technique thereof
A processing technology and anti-static technology, applied in the direction of metal material coating process, circuits, electrical components, etc., can solve the problems of reducing the service life of the display, broken and leaking TFT substrate, fragile and other problems, and achieve the effect of good anti-static function.
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Embodiment 1
[0023] This embodiment is a sputtering method with two target positions, and the process steps are as follows:
[0024] The TFT substrate is cleaned and thermally dried before coating, and then the film is mounted on the rack. The LHKJ vertical automatic continuous magnetron sputtering coating machine is used to coat the indium tin oxide film, that is, the ITO film. The coating material is indium oxide Tin SnO2, the ratio of indium to tin is 98:2, the heating temperature of the substrate is 70℃, the transmission frequency of the coating chamber is 18HZ, and the heating time is 15 minutes. Sputter coating is carried out according to the following method: the total pressure is 0.5Pa, the use of spacers After the two target positions are coated, the substrate temperature rises from 70°C to about 85°C. After the cooling of the two target positions, the substrate temperature drops from 85°C to 70°C, and then the second layer of indium tin oxide film is plated. The thickness of the indi...
Embodiment 2
[0027] This embodiment is a two-target sputtering method, and its process steps and parameters are as follows:
[0028] The TFT substrate is cleaned and thermally dried before coating, and then the film is mounted on the rack. The LHKJ vertical automatic continuous magnetron sputtering coating machine is used to coat the indium tin oxide film, that is, the ITO film. The coating material is indium oxide Tin SnO2, the ratio of indium to tin is 98:2, the substrate heating temperature is 60℃, and the heating time is 20 minutes. The transmission speed of the coating chamber is 16HZ. Sputter coating is carried out according to the following method: the total pressure of the coating chamber is 0.4Pa, Use two separate targets for coating. The substrate temperature rises from 60°C to about 75°C. After the two target positions are cooled, the substrate temperature drops from 75°C to 60°C, and then the second layer of indium tin oxide film is plated. Layer, the film thickness is controlled i...
Embodiment 3
[0031] This embodiment is a three-target sputtering method, and its process steps and parameters are as follows:
[0032] The TFT substrate is cleaned and dried before coating, and then the film is mounted on the rack. The LHKJ vertical automatic continuous magnetron sputtering coating machine is used to coat the indium tin oxide film. The coating material is indium tin oxide SnO2, The ratio of indium to tin is 98:2. The heating temperature of the substrate is 50℃, the heating time is 25 minutes, and the transmission speed of the coating chamber is 15HZ. Sputter coating is carried out according to the following method: the total pressure of the coating chamber is 0.3Pa, using spacers The three targets are coated, the substrate temperature rises from 50°C to about 65°C, after the cooling of the two target positions, the substrate temperature drops from 65°C to 50°C, and then the second layer of indium tin oxide film is plated. The two target positions are cooled, the substrate temp...
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