Large area anti-reflection conductive film continuous magnetron sputtering film coating production line

Abstract

The invention relates to a continuous magnetic control sputtering coating production line of a large-area anti-reflection conductive film, which comprises a plurality of vacuum chamber blocks which are adjacent in sequence, deployed in the transverse direction of a bedplate and communicated with a pumping system and comprise a pre-vacuum chamber and the like, a film advancing area and a film discharging area closely adjacent to the film advancing area, wherein, the film advancing area consists of a translational-motion rack for film advancing and the like, and the film discharging area consists of a translational-motion rack for film discharging and the like; magnetic-steering transport devices are arranged on the vacuum chamber blocks, the film advancing area and the film discharging area, together with an adaptive workpiece backing up rack form a production loop which runs continuously and circularly along the coating direction of a running loading frame and the backing up direction of the running loading frame so as to realize the technical proposal of continuous magnetic control sputtering coating of the large-area anti-reflection conductive film for a substrate. The production line of the invention overcomes the defects of the traditional transparent conducting film production line, namely, the transmittance range is narrow, no transport room is provided, the conversion ratio of transport speed of the substrate loading rack is small and production efficiency is low and the like. The production line of the invention is applicable to the production of the large-area sputtering coatings of transparent conductive films, anti-reflection films and high-reflection films and the like of various display panels, solar panels and decoration panels.

Description

technical field [0001] The invention relates to a vacuum coating production line, in particular to an anti-reflection conductive film composed of a large-area optical dielectric film and a transparent conductive film, and can realize continuous cycle of substrate loading and uninterrupted production of large-area anti-reflection conductive film products. Magnetron sputtering coating production line. Background technique [0002] The process adopted in the existing traditional conductive film glass production line is to coat silicon oxide (SiO 2 ) isolation layer and transparent conductive layer (generally use indium tin oxide plated ITO transparent conductive film). For example, the Chinese patent number is 01258489.4 and the authorized announcement number is CN2516564Y utility model patent, which discloses an online indium tin oxide glass plating device with intermediate frequency reactive sputtering silicon dioxide, which is designed with intermediate frequency reactive m...

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Problems solved by technology

But these two kinds of methods all have a lot of problems, there are following problems for Sol-Gel method to prepare anti-reflection conductive film: (1) the anti-reflection film process that Sol-Gel method prepares is complicated, and production cost is high; (2) Sol-Gel The material of the film coating method is limited, and the structural design of the anti-reflection film stack is not easy to change; (3) the technology for preparing the transparent conductive film by the Sol-Gel method is not yet mature, and the preparation of the anti-reflection film and the plating of the transparent conductive film cannot be completed at one time. The preparation of anti-reflection film by Gel method also needs to adopt the method of sputtering to plate transparent conductive film; and the existing transparent conductive film production line prepares anti-reflection conductive film and also has the following problems: (A) adopt the existing large-area conductive film coating production line Anti-reflective film coating, due to the low deposition rate of sputtering coating, repeated coating is required, and some anti-reflective film stack designs require repeated coating dozens of times; (B) the structure and structure of the existing reactive sputtering target Si target and ITO target Inconsistent size, not suitable for product process changes; (C) The film layer structure used in the existing production line is too complicated, not suitable for mass continuous production

However, at present, the equipment capable of mass production of large-area anti-reflection conductive film production has the characteristics of complex process and high cost.

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