MIM capacitor and manufacturing method thereof, semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., can solve the problems of reduced capacitance performance, deterioration of capacitor capacitance performance, roughness of the lower plate 135b, etc. Improved performance, improved flatness effect
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[0064] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
[0065] Figure 6 to Figure 10 It is a schematic cross-sectional view of the corresponding structure of each step of the embodiment of the manufacturing method of the MIM capacitor of the present invention.
[0066] Such as Figure 6 As shown, a semiconductor substrate 10 is provided, and an interconnection layer 12 is formed in the semiconductor substrate 10; the surface of the interconnection layer 12 is exposed, and the material of the interconnection layer 12 may be copper or aluminum; except for the interconnection Outside the surface area of the layer 12, the surface of the semiconductor substrate 10 is made of insulating material, and the insulating material can be silicon oxide, silicon nitride, silicon carbide, silicon oxycarbon compound, silicon carbon nitride, fluorosilicone glass, phosphorous silicon One of glass, borosilicate glass...
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