Preparation of germanium quantum point

The technology of quantum dots and cleaning solution is applied in the field of preparing germanium quantum dots, which can solve the problems of complex manufacturing process, high cost, small size and the like, and achieve the effects of simple manufacturing process, convenient growth and low cost.

Inactive Publication Date: 2009-03-18
XIAMEN UNIV
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a method for preparing Ge quantum dots that can achieve small size, high density, and no wetting layer for the existing Ge quantum dots with large size, wetting layer, complicated manufacturing process, and high cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation of germanium quantum point
  • Preparation of germanium quantum point
  • Preparation of germanium quantum point

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] figure 1 A schematic flow chart of the preparation of Ge quantum dots by the method of high-temperature deoxidation in a vacuum chamber is given in the present invention. exist figure 1 The labels in ① are silicon substrate; ② silicon buffer layer; ③ SiGe alloy layer, the Ge composition is greater than 0 and less than or equal to 0.5; ④ the oxide coating layer formed after standard cleaning, its thickness is about 3nm; Ge quantum dots formed on the surface of SiGe film.

[0022] A 100nm Si buffer layer and a 200nm Si buffer layer were epitaxially grown sequentially on the Si substrate 0.94 Ge 0.06 Alloy layer; followed by cleaning solution No. III (according to the volume ratio, H 2 SO 4 :H 2 o 2 =4:1) and No. II cleaning solution (according to volume ratio, HCl:H 2 o 2 :H 2 (0=1:1:4) after cleaning, an oxide layer with a thickness of about 3nm is formed on the surface of the SiGe alloy layer; after drying with nitrogen, put it into the vacuum chamber immediat...

Embodiment 2

[0024] Similar to embodiment 1, its difference is that the cleaning method to SiGe alloy only adopts No. I cleaning solution (NH 4 OH:H 2 o 2 :H 2 O=1:1:4) for cleaning.

Embodiment 3

[0026] Similar to embodiment 1, its difference is that the cleaning method to SiGe alloy only adopts No. II cleaning solution (HCl: H 2 o 2 :H 2 O=1:1:4) for cleaning.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
heightaaaaaaaaaa
Login to view more

Abstract

A process for preparing germanium quantum dots is provided. The invention provides a process for preparing Ge quantum dot which can realize small size and high density without wetted layer, which comprises growing a SiGe alloy layer on a silicon substrate or a silicon substrate of an insulator, wherein Ge component is larger than 0, or is smaller than or equal to 0.5, then cleaning the SiGe alloy layer with at least one of three kinds of cleaning fluid in turn, forming an oxide layer on the surface of the SiGe alloy layer after the cleaning, wherein the oxide is the mixture of SiO2 and GeO2, then placing the SiGe alloy layer which is coated with the oxide layer into a vacuum cavity to heat up and deoxidize, thereby obtaining the Ge quantum dots. The heating temperature can be larger than the deoxidizing temperature, and is smaller than the fusing point of SiGe.

Description

technical field [0001] The invention relates to a method for preparing germanium (Ge) quantum dots, in particular to a method for preparing a small-sized, A high-density Ge quantum dot approach without a SiGe wetting layer. Background technique [0002] Ge quantum dots confine carriers in three directions in space, making it exhibit many unique optical and electrical properties, such as quantum confinement effect, quantum tunneling effect, Coulomb blocking effect and quantum interference effect. New functional devices made of these properties will play an important role in future microelectronic and optoelectronic applications, especially resonant tunneling diodes based on quantum tunneling effects and single-electron devices based on Coulomb blocking effects will be used on large-scale integrated circuits. It has important application prospects. [0003] The traditional methods for preparing Ge quantum dots are: 1) using Stranski-Krastanow (S-K) mode on Si substrate to re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/20H01L33/00H01L31/18H01S5/00B82B3/00
CPCY02P70/50
Inventor 张永李成廖凌宏陈松岩赖虹凯康俊勇
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap