Process for growing ZnO thin-film on Si substrate

A substrate and thin film technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as lattice mismatch, Si substrate surface oxidation, and large thermal mismatch, so as to solve the problem of heat dissipation and improve Good performance and heat dissipation

Inactive Publication Date: 2009-03-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This can alleviate the problem of large lattice mismatch and thermal mismatch between the ZnO film and the Si substrate, and can solve the problem of the Si substrate surface being oxidized in the early stage of film growth.

Method used

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  • Process for growing ZnO thin-film on Si substrate
  • Process for growing ZnO thin-film on Si substrate
  • Process for growing ZnO thin-film on Si substrate

Examples

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Effect test

preparation example Construction

[0030] The present invention will be described in detail below in conjunction with the preparation method of the present invention and the accompanying drawings.

[0031] see figure 1 Shown, a kind of method of growing ZnO film on Si substrate of the present invention is characterized in that, comprises the following steps:

[0032] Step 1: use chemical cleaning method to clean the surface of Si substrate 10, and use hydrofluoric acid etching method to remove the oxide layer on its surface, described Si substrate 10 includes: (001), (011) or (111 ) crystal-oriented Si substrate;

[0033] Step 2: Put the cleaned Si substrate 10 into the deposition equipment, evaporate a layer of metal buffer layer 20, the metal buffer layer 20 includes: gold, silver, aluminum or magnesium, the thickness of the metal buffer layer 20 0.5-10 μm, and the deposition equipment for evaporating metal is physical vapor deposition equipment;

[0034] Step 3: Put the Si substrate 10 covering the metal ...

Embodiment 1

[0037] The specific steps of growing a ZnO thin film after evaporating metal Au on the Si substrate 10 of (001) crystal orientation are as follows (in conjunction with referring to figure 1 ):

[0038] Clean the surface of the Si substrate 10 with the (001) crystal orientation by a chemical cleaning method, and remove the oxide layer on the surface by hydrofluoric acid etching, so that the Si substrate 10 with the (001) crystal orientation is in a dehydrated state;

[0039] A layer of 850nm metal Au buffer layer was evaporated by physical vapor deposition method on the cleaned Si substrate 10 with (001) crystal orientation. During evaporation, the Si substrate 10 with (001) crystal orientation had a temperature of 150° C. and an air pressure of 4 ×10 -3 Pa;

[0040] Fix the Si substrate 10 with the (001) crystal orientation evaporated with the metal Au buffer layer on the substrate holder, and slowly put it into the growth equipment to grow the ZnO thin film. The growth equ...

Embodiment 2

[0045] The specific steps of growing a ZnO thin film after evaporating metal Au on the Si substrate 10 of (110) crystal orientation are as follows (in conjunction with referring to figure 1 ):

[0046] 1. Clean the surface of the Si substrate 10 with (110) crystal orientation by chemical cleaning method, and remove the oxide layer on the surface by hydrofluoric acid etching, so that the Si substrate 10 with (110) crystal orientation is in a dehydrated state ;

[0047] 2. Evaporate a layer of 750nm metal Au buffer layer by physical vapor deposition on the cleaned Si substrate 10 with (110) orientation. During evaporation, the temperature of Si substrate 10 with (110) orientation is 100° C. 4×10 -3 Pa;

[0048] 3. Fix the Si substrate 10 with the (110) crystal orientation evaporated with the metal Au buffer layer on the substrate holder, and slowly put it into the growth equipment to grow the ZnO thin film. The growth equipment used is a self-developed chemical vapor deposit...

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Abstract

A method for growing ZnO film on Si substrate is characterized by comprising the following steps: firstly cleaning the surface of the Si substrate through chemical cleaning method, and removing the oxide layer thereof through utilizing fluohydric acid etching method, secondly placing the cleaned Si substrate into a deposition device to evaporate a metal buffer layer, thirdly placing the Si substrate which covers the metal buffer layer into a growing device to grow a ZnO homo-buffer layer, finally growing a ZnO film on the ZnO homo-buffer layer, thereby finishing the preparation of the ZnO film on the Si substrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for growing a ZnO thin film on a Si substrate. Background technique [0002] ZnO is a typical wide bandgap semiconductor with a bandgap width of 3.37eV at room temperature and an exciton binding energy as high as 60meV, which is much larger than the thermal ionization energy (26meV) at room temperature. Theoretically, excitons with large binding energy are more suitable for efficient lasing at room temperature. Therefore, ZnO is a suitable UV-emitting material for use at room temperature or higher. In addition, ZnO has a large photoelectric coupling coefficient, low temperature coefficient, small dielectric constant, high light transmittance and other excellent characteristics, so it is widely used in semiconductor pressure sensitive, piezoelectric, ferroelectric devices, surface acoustic wave Devices and other aspects have broad application prospects. [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/36H01L33/00
Inventor 崔军朋段垚王晓峰曾一平
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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