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Novel light emitting transistor and manufacturing method thereof

A technology of light-emitting triodes and triodes, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electric-solid-state devices, etc., can solve the problems of observation, low light intensity of light-emitting triodes, and difficulty in spectrum, etc.

Inactive Publication Date: 2011-06-08
NANTONG MINICHIP MICRO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] One of the purposes of the present invention is to overcome the problems in the prior art that the light intensity of light-emitting transistors is not strong and the spectrum is difficult to observe, and to provide a new light-emitting transistor

Method used

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  • Novel light emitting transistor and manufacturing method thereof
  • Novel light emitting transistor and manufacturing method thereof
  • Novel light emitting transistor and manufacturing method thereof

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Experimental program
Comparison scheme
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Embodiment 1

[0019] Embodiment 1: Trial production of organic small molecule OLED with field effect. ITO thickness is 150nm, 250nm 2-TNATA (or CuPC) is used as hole injection layer and TFT active layer, 50nm 4,4'-bis[N-(1-napthyl)-N-phenyl-amino] -biphenyl (NPB) as the hole transport layer, 60nmtris (8-hydroxyquinoline) aluminum (Alq3) as the light-emitting layer, 10nm bathocuproine as the hole blocking layer. channel length L (see figure 1 ) are 5 microns, 15 microns and 30 microns, respectively.

Embodiment 2

[0020] Embodiment 2: Trial production of polymer PLED with field effect. The thickness of ITO is 150nm, and polymers with high mobility such as pentacene are prepared on the ITO by the solution-spinning gel method, and the thickness is 200nm. Then, the light-emitting layer MEH-PPV 150nm and the electrode material were prepared. channel length L (see figure 1 ) are 5 microns, 15 microns and 30 microns, respectively.

[0021] Analysis of the photoelectric characteristics of the invented device

[0022] see figure 2 , figure 2 is the I of a transistor with a channel length of 30 microns D and I G With V D The change. For an OLED, there is an ohmic contact between the electrodes and the organic layer at low voltages and a tunneling contact at high voltages. When negative V D When higher, I G -V D At steady state I G , exhibit different characteristics. As the negative gate voltage increases, the steady-state I G value will increase.

[0023] While the device of t...

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Abstract

The invention relates to a novel light emitting triode and a preparation method thereof. The triode is prepared by the following steps: a channel is formed on the anode of an organic electroluminescence diode by utilizing the photoetching technique, two source electrodes and one drain electrode are formed, and the unchanged cathode is taken as the grid electrode, wherein the length of the channelis 5 microns-30 microns. The triode has the FET characteristics of current modulation and the OLED characteristics of electro-optical conversion.

Description

technical field [0001] The invention relates to a new light-emitting transistor and a preparation method thereof. Background technique [0002] In recent years, organic semiconductor light-emitting devices have been widely used in the fields of diode light-emitting, flat-panel displays, and optically excited organic thin-film lasers due to their high brightness, fast delayed response, high contrast, and simple fabrication. Organic field-effect transistors (FETs) made of organic thin films or single crystals, such as naphthacene or 5,6,11,12-tetraphenyltetracene, also have very important application value. Moreover, Hepp (2003), Ahles (2004), Rost (2004), Oyamada (2005) and Nakamura (2005) have reported light-emitting electroluminescent diodes (OLEDs) driven by thin-film transistors (TFTs), and organic light-emitting triodes . Since the triode can use the third electrode to control the amount and type of injected charges, and the use of the light-emitting triode can make th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
Inventor 魏斌王军张建华李博汪敏
Owner NANTONG MINICHIP MICRO ELECTRONICS