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Alloy film capable of improving exchange bias field size and enhancing exchange bias stability, as well as preparation method thereof

A technology of alloy film and bias field, applied in the application of magnetic film to substrate, magnetic layer, metal material coating process, etc.

Inactive Publication Date: 2011-03-23
FUDAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Further measurements show that in the exchange bias system, there is a magnetic exercise effect, and the exchange bias field and coercive force both decrease during the continuous measurement of the hysteresis loop.

Method used

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  • Alloy film capable of improving exchange bias field size and enhancing exchange bias stability, as well as preparation method thereof
  • Alloy film capable of improving exchange bias field size and enhancing exchange bias stability, as well as preparation method thereof
  • Alloy film capable of improving exchange bias field size and enhancing exchange bias stability, as well as preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Example 1: Glass / Cu(6nm) / NiFe(6nm) / FeMn(3nm) / Au(6nm) exchange bias sample and glass / Cu(6nm) / NiFe(6nm) / FeMn (0.975) MgO (0.025) (3nm) / Au(6nm) exchange bias sample

[0015] Glass / Cu(6nm) / NiFe(6nm) / FeMn(3nm) / Au(6nm) exchange bias samples and glass / Cu(6nm) / NiFe(6nm) were prepared by computer-controlled multifunctional magnetron sputtering equipment / FeMn (0.975) MgO (0.025) (3nm) / Au(6nm) exchange biased samples where glass was used as the substrate. The details are as follows: put the cleaned substrate into the sputtering chamber, vacuumize, and wait for the background vacuum of the chamber to drop to 2.0×10 -5 At Pa, argon is passed through, and the argon pressure is maintained at 0.4-0.5Pa; the magnetron sputtering method is adopted, and the Cu target is firstly sputtered by DC, with a power of 30W and a current of 0.167A, and the sputtering rate is Then sputter the NiFe target, the power is 60W, the current is 0.196A, and the sputtering rate of the NiFe film is con...

Embodiment 2

[0016] Embodiment 2: Glass / Cu(6nm) / NiFe(6nm) / FeMn (1-x) MgO (x) (tnm) / Au(6nm) exchange bias sample t=3,5,7

[0017] The substrate glass Cu(6nm) / NiFe(6nm) / FeMn was prepared by computer-controlled multifunctional magnetron sputtering equipment (1-x) Mg0 (x) (tnm) / Au(6nm) (t = 3, 5, 7) exchange biased samples where glass was used as the substrate. The details are as follows: put the cleaned substrate into the sputtering chamber, vacuumize, and wait for the background vacuum of the chamber to drop to 2.0×10 -5 At Pa, argon is passed through, and the argon pressure is maintained at 0.4-0.5Pa; the magnetron sputtering method is adopted, and the Cu target is firstly sputtered by DC, with a power of 30W and a current of 0.167A, and the sputtering rate is Then sputter the NiFe target, the power is 60W, the current is 0.196A, and the sputtering rate of the NiFe film is controlled at Then DC sputtering the FeMn target, the power is 60W, the current is 0.122A, and the sputtering r...

Embodiment 3

[0018] The substrate glass Cu(6nm) / NiFe(6nm) / FeMn was prepared by computer-controlled multifunctional magnetron sputtering equipment (1-x) MgO (x) (3nm) / Au(6nm) exchange biased samples where glass was used as the substrate. The details are as follows: put the cleaned substrate into the sputtering chamber, vacuumize, and wait for the background vacuum of the chamber to drop to 2.0×10 -5 At Pa, argon is passed through, and the argon pressure is maintained at 0.4-0.5Pa; the magnetron sputtering method is adopted, and the Cu target is firstly sputtered by DC, with a power of 30W and a current of 0.167A, and the sputtering rate is Then sputter the NiFe target, the power is 60W, the current is 0.196A, and the sputtering rate of the NiFe film is controlled at Then DC sputtering the FeMn target, the power is 60W, the current is 0.122A, and the sputtering rate is FeMn film is obtained; or co-sputtering of FeMn and MgO targets, DC sputtering of FeMn targets, the power is 60W, the ...

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PUM

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Abstract

The invention belongs to the technical fields of magneto-electronics and magnetic ultra-thin film materials and particularly relates to an alloy thin film which can improve the size of an exchange bias field and enhance the stability of exchange bias and a preparation method thereof. The method is different from the traditional single antiferromagnetic material growth or the conventional atom substituted doped growth. The MgO and FeMn co-sputtering method is used to cause an antiferromagnetic layer to form a non-atom-substituted granular film, therefore, an exchange bias dual-layer film sample which is completed by the method can remarkably improve the exchange bias field, reduce the magnetic training effect and enhance the stability. The special doping method is beneficial to improving the exchange bias field further and enhancing the thermal stability of the exchange bias and a spin-valve sample.

Description

technical field [0001] The invention belongs to the technical field of magnetoelectronics and magnetic ultra-thin film materials, and in particular relates to an alloy thin film capable of increasing the magnitude of the exchange bias field and enhancing the stability of the exchange bias and a preparation method thereof. [0002] Background technique [0003] Exchange bias is an interfacial exchange coupling phenomenon existing in ferromagnetic-antiferromagnetic bilayer films. It has a very wide range of applications in spintronics, such as magnetic field sensors, spin valve read heads, tunneling magnetoresistance read heads, and so on. In the exchange bias, the center of the hysteresis loop of the ferromagnetic layer deviates from the zero field by a certain value, and the coercive force is increased compared with that of the single-layer ferromagnetic layer. Further measurements show that in the exchange bias system, there is a magnetic exercise effect, and the exchange ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F10/14H01F10/18H01F41/18C23C14/35
Inventor 周仕明胡海宁
Owner FUDAN UNIV