High electron mobility device for trench gate type source field board and manufacturing method therefor

Abstract

The invention discloses a groove-gate type source field plate device with high electron mobility and a fabrication method thereof. The device comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a groove gate (7), a passivation layer (8), a source field plate (9) and a protection layer (11); the groove gate (7)is arranged in a groove (6) of the barrier layer, the source field plate (9) is electrically connected with the source electrode (4), wherein, n floating field plates (10) are deposited on the passivation layer (8), the floating field plates and the source field plate are positioned at the same level. The floating field plate have the same size and are mutually independent, and the spacing between two adjacent floating field plates successively increases based on the number of the floating field plates arranged along the direction from the source field plate to the drain electrode. The n floating field plates and the source field plate are completed on the passivation layer by one time process. The device has the advantages of simple process, high output power and good reliability, and the device and the method can be used for fabricating microwave power devices based on a compound semiconductor material heterojunction.

Description

technical field The invention belongs to the field of microelectronics technology, and relates to semiconductor devices, in particular to a groove-gate type source field plate high electron mobility device based on a heterojunction structure of III-V compound semiconductor materials, which can be used as a microwave, millimeter wave communication system and a radar system basic device. technical background As is well known in the industry, semiconductor materials composed of group III elements and group V elements, that is, group III-V compound semiconductor materials, such as gallium nitride (GaN)-based, gallium arsenide (GaAs)-based, indium phosphide (InP)-based And other semiconductor materials, their bandgap widths are often quite different, so people usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the bandgap of III-V compound semiconductor materials on both sides of the heterojunction i...

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Problems solved by technology

However, the manufacturing process of stacked field plate high electron mobility devices is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material deposition, stripping, and cleaning, and it is necessary to make each layer The insulating dielectric material deposited under the field plate has an appropriate thickness, and cumbersome process debugging must be carried out, which greatly increases the difficulty of device manufacturing and reduces the yield of devices

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