Organo-magnetoresistive sensor and uses thereof
A magnetoresistive, organic technology, applied in the direction of measuring devices, nanomagnetism, measuring magnetic variables, etc., can solve the problem of high production cost and achieve the effect of improving the degree of freedom
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[0033]A flexible polyethylene naphthalate film is used as the substrate for the fabrication of organic field effect transistors. After cleaning the film in acetone and isopropanol, a thin layer of titanium is deposited on the film and structured by means of photolithography and wet-chemical pickling in dilute hydrofluoric acid to define the gate electrode of the transistor. A thin layer of silicon oxide is then deposited by means of cathode ray spraying as the gate dielectric for the transistor and structured by means of photolithography and wet-chemical pickling. The palladium is then deposited either by thermal evaporation, by electron beam evaporation, or by cathode ray spraying, and by means of photolithography and pickling in a strong dilute mixture of hydrochloric and nitric acids to define the source contact of the transistor and drain contacts. The substrate was then immersed in a 5% solution of diphenylphosphine in xylene for 5 minutes in order to precipitate a monol...
example 2
[0035] A 30 nm-thick titanium or aluminum layer was evaporated or sputtered onto a glass plate and structured using photolithography. This layer is used to create the part of the connecting wire between the gate electrode and the transistor. A 100 nm polyethylene solution was spin-coated onto this layer and structured using photolithography. The holes in this layer are used as "vias" between the source-drain layer and the gate layer. 30 nm of gold are then evaporated and structured using photolithography. This layer is used to create the source and drain electrodes and other connecting wires. In order to perfect the transistor structure, 30nm pentacene was evaporated. Alternatively, pentacene can also be precipitated out of the starting compound. In order to protect the sensitive semiconductor layer from further processing steps, a 2 μm thick parylene layer is deposited and structured using photolithography.
[0036] Instead of glass plates, oxidized silicon wafers, insul...
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