Method for improving smoothness of reflector in micro-mechanical non-refrigeration infrared imaging chip

Abstract

The invention discloses a method for improving smoothness of reflector in micro-mechanical non-refrigeration infrared imaging chip, comprising the steps as follows: the frontal face of a silicon substrate is coated by optical photoresist so as to gain reflector stiffener graphics by photo-etching exposure; the reflector stiffener graphics on the silicon substrate are etched; silicon nitride grows on dual surfaces of the silicon substrate; the back surface of the silicon substrate is coated by the optical photoresist so as to gain back surface corrosion window graphics by photo-etching exposure; the silicon nitride of the back surface corrosion window is etched; reflector and contraflexure beam graphics are color-printed and photo-etched on the frontal face of the silicon substrate; metal chrome layer is vaporized and peeled off by ultrasonic; the silicon nitride on the frontal face of the silicon substrate is etched; the metal chrome used as a masking layer is removed, thus gaining the reflector and contraflexure beam graphics; the reflector graphics are color-printed and photo-etched on the frontal face of the silicon substrate; the chrome / gold is vaporized after exposure and development and is then peeled off by ultrasonic; the contraflexure beam graphics are color-printed and photo-etched on the frontal face of the silicon substrate; the chrome / gold is vaporized after exposure and development and is then peeled off by ultrasonic; the silicon substrate below the reflector and the contraflexure are removed and the structure is released. The method improves the final infrared imaging effect.

Description

technical field [0001] The invention relates to the technical field of preparation of microelectronic devices, in particular to a method for improving the flatness of a reflective plate in a micromechanical uncooled infrared imaging chip. Background technique [0002] The traditional infrared radiation detector absorbs the infrared energy of the incident light to increase the temperature of the detection unit, and then detects the pyroelectric effect caused by the temperature rise of the detector through an integrated circuit, such as changes in resistivity and capacitance, to obtain infrared radiation information. [0003] In the traditional thermal infrared detector, the pyroelectric effect is read by the integrated circuit from each detector unit. Since the current input will generate additional heat on the detector unit, it is difficult to accurately detect the incident infrared in this way. radiation. [0004] The sensitive unit of the infrared detector based on the ph...

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Problems solved by technology

[0005] The present invention is an improved design to 200310112820.1 (photo-mechanical microbeam array thermal infrared image sensor) and 200510012264.X (photo-mechanical double-layer structure uncooled infrared imaging focal plane array), because the unimproved reflector will Due to the problem of film stress and then released, it bends and cannot maintain a flat reflective surface

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