Atmospheric pressure plasma generating method, plasma processing method and component mounting method using same, and device using these methods

Abstract

A first inert gas (5) is supplied into a reaction space (1) and a high-frequency power supply (4) applies a high-frequency electric field so that a primary plasma (6) composed of the first inert gas which has been made into the plasma is ejected from the reaction space. A mixed gas area (10) in which a mixed gas (8) having a second inert gas (12) as a main ingredient and a proper amount of a reactive gas (13) mixed is formed. The primary plasma collides into the mixed gas area to generate a secondary plasma (11) composed of the mixed gas which has been made into the plasma, and the secondary plasma is sprayed on a processed object (S) to carry out a plasma processing. Accordingly, the plasma processing is carried out in a wide range by an atmospheric pressure plasma generated by a small input power.

Description

technical field [0001] The present invention relates to a method of generating atmospheric pressure plasma that performs plasma processing over a wide range using low input power, a processing method and a component mounting method by the generated atmospheric pressure plasma, and a method using these s installation. Background technique [0002] Generally, there is known an atmospheric pressure plasma generating device which converts an inert gas into plasma near atmospheric pressure (in the range of 500 to 1500 mmHg in terms of pressure) and converts an active gas into plasma by free radicals generated by the inert gas. Plasma for plasma treatments such as surface reconstruction, etching, and deposition. In such an atmospheric pressure plasma generating apparatus, an inert gas and a reactive gas mixed in a predetermined ratio in advance are supplied to one end of a cylindrical reaction vessel. A high-frequency electric field is applied to the reaction container to conver...

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Problems solved by technology

[0010] However, Figure 22 The problem with the structure shown in is that, as mentioned above, a large input power is required to generate the plasma and the device becomes very large

Besides, the lifetime of the active gas which becomes plasma is very short and the plasma 105 disappears immediately after being ejected from the other end of the reaction chamber 101

Therefore, the active gas that becomes plasma cannot function efficiently unless the distance L between the other end of the reaction chamber 101 and the processing object 106 is very short, and thus there is a problem that the distance range of the plasma processing is limited to a very small range. Small

Therefore, there is a problem that the reactive gas 116 cannot be sufficiently turned into plasma

However, the lifetime of noble gases is still short, and there is a problem that the range of distances for plasma processing is limited to a small

And expensive high-purity gas is necessary because if low-purity gas is used for atmospheric pressure plasma, the plasma will become unstable

Therefore, there is a problem that the running cost of the plasma treatment becomes extremely high

[0013] There are also problems in that it is difficult to stably apply the plasma flow to the processing portion of the processing object, and it is difficult not to apply the plasma flow to a position other than the processing portion because the plasma flow is continuously ejected

Therefore, there is a problem that the equipment and structure of the control mechanism becomes complicated

[0014] Also, since the active gas that becomes plasma as described above has a short lifetime in the generated plasma, the plasma flow disappears immediately after being ejected from the outlet of the plasma head

Therefore, the active gas that becomes plasma cannot work efficiently without shortening the distance between the exit of the plasma head and the processing object, so there is a problem that the efficiency of plasma processing decreases and due to the distance range of plasma processing Constrained to be small complicates movement control during processing

Due to this, plasma treatment must be performed in a process separate from the component mounting process, so there is a problem that the productivity of component mounting is severely reduced

When the plasma treatment is performed in a separate process, there is a problem that the plasma treated part is recontaminated during the transfer of the substrate from the plasma treatment process to the component mounting process

However, the plasma region temperature of thermal plasma is several thousand to tens of thousands of degrees Celsius, so there is a problem that when the substrate to which the plasma is applied has heat-sensitive parts, the thermal plasma damages the substrate by heat

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