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Exhaust system and wafer heat treatment apparatus

A technology of heat treatment device and exhaust system, applied in crystal growth, electrical components, single crystal growth and other directions, can solve problems such as easy failure of pressure control device, improve cooling effect, reduce the number of cleaning, and improve the effect of blocking problems

Inactive Publication Date: 2009-06-17
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The invention provides an exhaust system and a wafer heat treatment device to improve the phenomenon that the pressure control device in the existing exhaust system is prone to failure

Method used

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  • Exhaust system and wafer heat treatment apparatus
  • Exhaust system and wafer heat treatment apparatus
  • Exhaust system and wafer heat treatment apparatus

Examples

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no. 1 example

[0048] The first embodiment of the present invention introduces a new exhaust system, which is connected to the furnace tube of the low-pressure chemical vapor deposition equipment, and is used for exhausting the gas in the low-pressure chemical vapor deposition equipment. Specifically, the process performed by the low-pressure chemical vapor deposition equipment in this embodiment is: using H 2 O vapor and 1,2-dichloroethane (DCE, 1,2-dichloroethane) gas form a silicon oxide layer on the silicon nitride layer on the surface of the substrate to increase the surface density of the silicon nitride layer. The DCE gas added in the wet oxidation method can effectively remove sodium and iron ions in the formed silicon oxide layer, and improve the quality of film formation.

[0049] The gas discharged by the exhaust system in this embodiment includes both H that has not participated in the reaction. 2 O steam and DCE gas, including some gaseous intermediate products (such as incompletely...

no. 2 example

[0063] The second embodiment of the present invention introduces a wafer heat treatment device, such as a low pressure chemical vapor deposition equipment. Specifically, the process performed by the low-pressure chemical vapor deposition equipment in this embodiment is the use of H 2 O vapor and 1,2-dichloroethane (DCE, 1,2-dichloroethane) gas form a silicon oxide layer on the silicon nitride layer on the surface of the substrate.

[0064] The gas exhausted by the exhaust system of the wafer heat treatment device in this embodiment includes both H 2 O steam and DCE gas, including some gaseous intermediate products (such as incompletely decomposed DCE gas) and gaseous products, the composition is more complicated.

[0065] Figure 5 It is a schematic diagram of the wafer heat treatment apparatus in the second embodiment of the present invention, such as Figure 5 As shown, the wafer heat treatment apparatus provided in this embodiment includes a processing chamber 500, an air supply...

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Abstract

The invention discloses an exhaust system, which comprises an exhaust passage, a first air cooling device and a pressure control device, wherein the first air cooling device and the pressure control device are sequentially connected to the exhaust passage, a second air cooling device is further connected to the exhaust passage between the first air cooling device and the pressure control device, and the exhaust passage between the first air cooling device and the second air cooling device, and the pressure control device are connected with a drainage device via a drain pipe. The invention further discloses a corresponding chip heat-processing device using the exhaust system. By utilizing the exhaust system and the chip heat-processing device, blockage caused by sediment generation at the pressure control device is effectively solved, thereby strengthening control force of the exhaust system to exhausted air.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to an exhaust system and a wafer heat treatment device. Background technique [0002] In the field of semiconductor manufacturing, exhaust systems are often used to exhaust gas from a processing chamber (such as a chamber or furnace tube). The system usually has an exhaust passage and a device for controlling the exhaust pressure (such as a pressure control device) to control the pressure balance in the processing chamber. Once the exhaust system fails, it will cause the pressure in the processing chamber to lose balance, and the corresponding process will also have problems. [0003] Take, for example, a wafer heat treatment device that grows a film on the surface of a semiconductor wafer or performs thermal annealing treatment on the semiconductor wafer. At present, the more commonly used vertical wafer heat treatment device. The U.S. Patent No. US 5562383 d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/324C23C16/44C30B25/14F27D7/00
Inventor 李春龙赵星宋海
Owner SEMICON MFG INT (SHANGHAI) CORP
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