Thin-film deposition apparatus using discharge electrode and solar cell fabrication method

Abstract

A discharge electrode, a thin-film deposition apparatus, and a solar cell fabrication method, which suppress the generation of a film thickness distribution and a film quality distribution, are provided. The discharge electrode includes two lateral structures 20 that are substantially parallel to each other and extend in an X direction; and a plurality of longitudinal structures 21a that are provided between the two lateral structures, are substantially parallel to each other, and extend in a Y direction substantially orthogonal to the X direction. The longitudinal structures 21a each includean electrode main body 35 whose one end 35a is connected to one of the lateral structures 20 and whose the other end 35b is connected to the other lateral structure 20; a gas pipe 41 disposed in a gas-pipe accommodating space 36; and a porous body 40. An opening 38 opens to a substrate 8 and is covered with the porous body 40. A gas diffusion path 37 connects the gas-pipe accommodating space 36 and the opening 38. The electrode inner surface 39 faces the gas-pipe accommodating space 36 and opposes the pipe outer surface 42b. A nozzle hole group 42c is arranged in the second direction in the gas pipe 41, and faces a section 39a at a side opposite to the gas diffusion path 37 in the electrode inner surface 39.

Description

technical field [0001] The present invention relates to a discharge electrode used for generating plasma, a thin-film manufacturing device using the discharge electrode, and a method for manufacturing a solar cell. Background technique [0002] In thin film manufacturing apparatuses for manufacturing amorphous silicon solar cells, microcrystalline silicon solar cells, and thin films for TFT (Thin Film Transistor), increasing the area of ​​substrates is being promoted from the viewpoint of improving production efficiency and the like. When forming such a large-area substrate (example: 1 m×1 m or more), a method using high-frequency plasma is useful. When high-frequency plasma is used, not only a parallel plate-type film-forming device but also a film-forming method using ladder-type electrodes is effective. As a prior art of such a film forming method, for example, a technique using trapezoidal electrodes disclosed in JP-A-2002-322563 is known. [0003] In order to reduce t...

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Problems solved by technology

However, the high-voltage narrow-gap method produces a distribution of film thickness due to the local structure of the discharge electrode 103.

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