Preparation device and preparation method for widened self-supported silicon-oxygen-carbon thin film

Abstract

The invention relates to a preparation device and a preparation method for a widened self-supported silicon-oxygen-carbon thin film and relates to silicon-oxygen-carbon thin films. The preparation device comprises a supporting system, a film weaving system, a roller forming system and a heating system, wherein the supporting system provides a bracket and a base for the film weaving system and the roller forming system; the film weaving system is provided with an ejector pin, a film spraying charging barrel and a mould jet plate; the roller forming system is provided with a transverse widener, a vertical widener and a winder; the heating system is provided with a film discharge plate, a heater, an insulating body, a furnace wall, a glass window, a pair of heat-proof gloves, a double-buret clamp, a handle, a thermocouple and a temperature controller. The preparation method comprises the following steps: by taking polycarbosilane as a precursor, firstly defoaming and fusing polycarbosilane in an inert gas atmosphere; then, exporting the fused polycarbosilane from a film outlet to an extruding forming device; in an environment of inert gas atmosphere protection and relatively high temperature, rolling many times with a roller to obtain a polycarbosilane original film with a relatively great width; and carrying out oxidizing crosslinking and high-temperature splitting sintering on the original film to obtain the widened self-supported silicon-oxygen-carbon thin film.

Description

technical field

[0001] The invention relates to a silicon-oxygen-carbon thin film, in particular to a preparation device and a preparation method for a widened self-supporting silicon-oxygen-carbon thin film. Background technique

[0002] In recent years, microelectronics, as an emerging technology, has achieved rapid development with its strong vitality, which has led to the research and improvement of a large number of new materials. Among them, silicon carbide (SiC) material, as a wide bandgap semiconductor material, has been favored by many researchers for a long time. Silicon carbide materials have excellent physical and chemical properties such as high breakdown electric field, large thermal conductivity, small dielectric constant, high electron mobility, low thermal expansion coefficient, strong radiation resistance and good chemical stability. Devices, light-emitting diodes (LEDs) and other fields play an important role. Silicon carbide thin films have high mechani...

Examples

Embodiment Construction

[0033] The structure and working principle of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0034] 1) Take 10g of PCS precursor, fix the size of the film spray port by adjusting the left and right splints under the film spray port, and then perform degassing treatment on PCS: the degassing device used should preferably be the structure described in Chinese patent ZL 2008100705331: Put the solid polycarbosilane into the barrel of the defoaming device, install the ejector rod 21, the upper sealing cover (not shown in the figure, refer to the patent ZL2008100705331, the same below), the gasket and the lower sealing cover, and use four screws lock tight. After assembly, put the defoaming device filled with solid polycarbosilane into the vacuum furnace, set the temperature rise program as the temperature rises from room temperature to 260°C in 100 minutes, then rises to 290-300°C in 20 minutes, and then keep warm at this te...

technical field

[0001] The invention relates to a silicon-oxygen-carbon thin film, in particular to a preparation device and a preparation method for a widened self-supporting silicon-oxygen-carbon thin film. Background technique

[0002] In recent years, microelectronics, as an emerging technology, has achieved rapid development with its strong vitality, which has led to the research and improvement of a large number of new materials. Among them, silicon carbide (SiC) material, as a wide bandgap semiconductor material, has been favored by many researchers for a long time. Silicon carbide materials have excellent physical and chemical properties such as high breakdown electric field, large thermal conductivity, small dielectric constant, high electron mobility, low thermal expansion coefficient, strong radiation resistance and good chemical stability. Devices, light-emitting diodes (LEDs) and other fields play an important role. Silicon carbide thin films have high mechani...

Examples

Embodiment Construction

[0033] The structure and working principle of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0034] 1) Take 10g of PCS precursor, fix the size of the film spray port by adjusting the left and right splints under the film spray port, and then perform degassing treatment on PCS: the degassing device used should preferably be the structure described in Chinese patent ZL 2008100705331: Put the solid polycarbosilane into the barrel of the defoaming device, install the ejector rod 21, the upper sealing cover (not shown in the figure, refer to the patent ZL2008100705331, the same below), the gasket and the lower sealing cover, and use four screws lock tight. After assembly, put the defoaming device filled with solid polycarbosilane into the vacuum furnace, set the temperature rise program as the temperature rises from room temperature to 260°C in 100 minutes, then rises to 290-300°C in 20 minutes, and then keep warm at this te...

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