Preparation device and preparation method for widened self-supported silicon-oxygen-carbon thin film

Abstract

The invention relates to a preparation device and a preparation method for a widened self-supported silicon-oxygen-carbon thin film and relates to silicon-oxygen-carbon thin films. The preparation device comprises a supporting system, a film weaving system, a roller forming system and a heating system, wherein the supporting system provides a bracket and a base for the film weaving system and the roller forming system; the film weaving system is provided with an ejector pin, a film spraying charging barrel and a mould jet plate; the roller forming system is provided with a transverse widener, a vertical widener and a winder; the heating system is provided with a film discharge plate, a heater, an insulating body, a furnace wall, a glass window, a pair of heat-proof gloves, a double-buret clamp, a handle, a thermocouple and a temperature controller. The preparation method comprises the following steps: by taking polycarbosilane as a precursor, firstly defoaming and fusing polycarbosilane in an inert gas atmosphere; then, exporting the fused polycarbosilane from a film outlet to an extruding forming device; in an environment of inert gas atmosphere protection and relatively high temperature, rolling many times with a roller to obtain a polycarbosilane original film with a relatively great width; and carrying out oxidizing crosslinking and high-temperature splitting sintering on the original film to obtain the widened self-supported silicon-oxygen-carbon thin film.

Description

technical field [0001] The invention relates to a silicon-oxygen-carbon thin film, in particular to a preparation device and a preparation method for a widened self-supporting silicon-oxygen-carbon thin film. Background technique [0002] In recent years, microelectronics, as an emerging technology, has achieved rapid development with its strong vitality, which has led to the research and improvement of a large number of new materials. Among them, silicon carbide (SiC) material, as a wide bandgap semiconductor material, has been favored by many researchers for a long time. Silicon carbide materials have excellent physical and chemical properties such as high breakdown electric field, large thermal conductivity, small dielectric constant, high electron mobility, low thermal expansion coefficient, strong radiation resistance and good chemical stability. Devices, light-emitting diodes (LEDs) and other fields play an important role. Silicon carbide thin films have high mechani...

AI Technical Summary

Problems solved by technology

[0007] At present, there is no technical precedent for the preparation of widened self-supporting continuous silicon oxygen carbon film by combining the precursor conversion method, the melt spinning method and the roll forming method in China.

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