Purification method of ultra-pure silicon dioxide sol

A technology of pure silica and purification method, which is applied in the field of purification of ultra-high-purity silica sol, can solve problems such as high cost, adverse effects of chip polishing, and environmental pollution, and achieve short purification time, good purification effect, high efficiency effect

Inactive Publication Date: 2009-07-08
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (2) Point defects: solvents, alcohols, amines;
However, the raw material (TMOS/TEOS) of this method is more expensive, the cost is higher (the utilization rate of the raw material is less than 30%), and the ethanol or methanol produced by

Method used

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  • Purification method of ultra-pure silicon dioxide sol
  • Purification method of ultra-pure silicon dioxide sol
  • Purification method of ultra-pure silicon dioxide sol

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Strong-acid cation exchange resins have exchange groups -SO on the resin skeleton 3 The cation exchange resin for H is Dowex 50W; the strong base anion exchange resin has an exchange group -N on the resin skeleton. + (CH 3 ) 3 Cl - or -N + (CH 3 ) 3 C 2 h 4 OHCl - Anion exchange resin, choose Dowex 1 for use, strong acid and strong base mixed bed resin is the mixed bed resin of Dowex 50W and Dowex 1.

[0051] The silicon dioxide content of the silica sol to be purified is 30%, the particle size is 30nm, the metal ion content is about 4000ppm, and the anion content is about 1000ppm. The purification method steps of the ultra-high-purity silica sol are as follows,

[0052] (1) strong acid type cation exchange resin, strong base type anion exchange resin and strong acid strong base mixed bed resin (in the strong acid strong base mixed bed resin, the volume ratio of strong acid type cation exchange resin and strong base type anion exchange resin is 2.0: 1) Filled ...

Embodiment 2

[0066] Strong-acid cation exchange resins have exchange groups -SO on the resin skeleton 3 The cation exchange resin for H is Amberlite IR-120; the strong base anion exchange resin has an exchange group -N on the resin skeleton. + (CH 3 ) 3 Cl - or -N + (CH 3 ) 3 C 2 h 4 OHCl - The anion-exchange resin for use is Amberlite IRA-400, and the strong acid and strong base mixed bed resin is the mixed bed resin of Amberlite IR-120 and Amberlite IRA-400.

[0067] The silicon dioxide content of the silica sol to be purified is 40%, the particle size is 30nm, the metal ion content is about 2000ppm, and the anion content is about 600ppm. The purification method steps of the ultra-high-purity silica sol are as follows,

[0068] (1) strong acid type cation exchange resin, strong base type anion exchange resin and strong acid strong base mixed bed resin (in the strong acid strong base mixed bed resin, the volume ratio of strong acid type cation exchange resin and strong base type ...

Embodiment 3

[0078] Strong-acid cation exchange resins have exchange groups -SO on the resin skeleton 3 The cation exchange resin of H is Amberlyst 15; the strong base anion exchange resin has an exchange group -N on the resin skeleton. + (CH 3 ) 3 Cl - or -N + (CH 3 ) 3 C 2 h 4 OHCl - The anion-exchange resin for use is Amberlite IRA-410, and the strong acid and strong base mixed bed resin is the mixed bed resin of Amberlyst 15 and Amberlite IRA-410.

[0079] The silicon dioxide content of the silica sol to be purified is 30%, the particle size is 10nm, the metal ion content is about 3400ppm, and the anion content is about 450ppm. The purification method steps of the ultra-high-purity silica sol are as follows,

[0080] (1) strong acid type cation exchange resin, strong base type anion exchange resin and strong acid strong base mixed bed resin (in the strong acid strong base mixed bed resin, the volume ratio of strong acid type cation exchange resin and strong base type anion exc...

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Abstract

The invention discloses a method for purifying a silica sol with superhigh purity in the technical field of chemical mechanical polishing. The purification process comprises taht: strong acid type cation exchange resin, strong alkali type anion exchange resin and strong acid and strong alkali mixed-bed resin are filled to an ion exchange column and are subjected to regeneration treatment; the temperature of the silica sol is controlled between 0 and 60 DEG C and inversely flows through a strong acid type cation exchange bed; the obtained acid silica sol inversely flows through a strong alkali type anion exchange bed and is added with a chelator so that pH of the silica sol is between 1.0 and 3.0; and the silica sol added with the chelator inversely flows through a strong acid and strong alkali ion exchange resin mixed bed to obtain the purified silica sol. The method has good purification effect, can obtain the silica sol of which the superhigh purity meets the requirement of the chemical mechanical polishing, has short purification time and high efficiency, and can be used for continuous industrialized production.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular relates to a purification method of ultra-high-purity silica sol. Background technique [0002] Over the past few decades, a society of beliefs has emerged, built on computers, the Internet, wireless communications, and global positioning systems. The core part of this information society is supported and constituted by many small integrated circuit (IC) chips built into the system, and integrated circuits have been widely used in various fields of life. In the field of electronics manufacturing, Gordon Moore made his famous observation in 1965, known as "Moore's Law". Moore discovered and predicted that the number of transistors on an integrated circuit chip of the same size would double every two years. Moore's Law has had a huge impact on the semiconductor industry and has inspired all practitioners. During the more than 40 years since it was proposed,...

Claims

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Application Information

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IPC IPC(8): C01B33/148C09G1/02
Inventor 潘国顺顾忠华雒建斌路新春刘岩
Owner TSINGHUA UNIV
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