Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency

A plasma and magnetron cathode technology, applied in cleaning methods and appliances, semiconductor/solid-state device manufacturing, discharge tubes, etc., can solve the problems of low plasma etching/cleaning rate, non-adjustable plasma density, and Low-level problems, achieve high-uniformity surface cleaning treatment, save equipment internal space, and achieve high plasma density effects

Active Publication Date: 2013-11-13
SUZHOU SUNLIGHTS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the plasma magnetron sputtering cathode uses a built-in permanent magnet to generate a magnetic field to enhance the plasma density, its cathode has the disadvantages of complex structure, high cost, and large space occupation, and is not suitable for large-area plasma cleaning equipment. middle application
[0004] In the application of plasma etching cathodes, columnar or rod-shaped structures are mostly used at present. The disadvantages of this form of cathodes are: there are usually no shields on the back, and plasma is generated around the cathode during operation, and the effective plasma utilization rate is less than 50%. %, so under the same power consumption, the plasma density of the columnar / rod cathode is lower, which will lead to a lower rate of plasma etching / cleaning; to obtain a higher plasma density, the columnar / rod cathode requires High power consumption
In addition, under the condition of a certain applied power, the density of the plasma cannot be adjusted, which also limits the application of this type of cathode.

Method used

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  • Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency
  • Magnetic control cathode assembly for cleaning one-dimensional linear plasma with high efficiency

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Experimental program
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Effect test

Embodiment 1

[0018] By adopting the cathode device of the present invention, the processing object 2, such as large-area glass, can be continuously cleaned under atmospheric pressure. The width of the glass is 1.5m, and the length of the linear metal plate cathode 3 is 1.8m, and the width is 50mm. , the distance between the large-area glass and the linear metal plate cathode 3 is 5 mm, and the glass is placed directly under the linear metal cathode plate 3 through the transmission device, and performs a uniform linear reciprocating motion. The cavity maintains an air atmosphere of 1 atmosphere, and the power supply passes through The cathode electrode joint 6 generates plasma on the surface of the linear metal plate cathode 3, and the intensity of the plasma is adjusted by adjusting the power of the cathode power supply.

[0019] The uniformity of this method is about 85% to the cleaning of large-area glass. On the basis of the above-mentioned technology, an electric current is added on the...

Embodiment 2

[0021] Adopt the magnetic field negative electrode of the present invention to process object 2 under atmospheric pressure: large-area polymer film, as the cleaning treatment of plastic film surface, glass continuous cleaning, the width of large-area polymer film is 1m, and the length of linear metal plate cathode 3 is 1.2m, the width is 80mm, the distance between the large-area glass and the linear metal plate cathode 3 is 8mm, the glass is placed directly under the linear metal plate cathode 3 through the transmission device, and moves at a uniform speed in one direction, and passes through the intake pipe 7 in the vacuum chamber Argon gas is introduced into the body to keep the air pressure in the cavity at 0.8 Pa. The power supply generates plasma on the surface of the linear metal plate cathode 3 exposed outside the shielding cover 5 through the cathode electrode connector 6, and the plasma intensity is adjusted by adjusting the power of the cathode power supply. The unifo...

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Abstract

The invention relates to the technical field of a plasma magnetic control cathode and in particular to a one-dimensional linear plasma cleaning magnetic control cathode device with high efficiency. The device is characterized in that the top of an electrode contact of a cathode is connected with a hollow pipeline and the bottom of the electrode contact of the cathode passes through an upper wall of a vacuum cavity body and is then connected with an upper surface of a cathode of a linear metal plate in the vacuum cavity body. A shield cover is arranged between the vacuum cavity body and the cathode of the linear metal plate and the upper partof the shield cover is also connected with a gas inlet pipe of which the top is positioned outside the vacuum cavity body. The upward side outside the vacuum cavity body is provided with a magnetic coil device. Compared with the prior art, the device has convenient and simple structure and realizes surface cleaning processing with high plasma density, low power consumption and high uniformity; the adjustment of the electromagnetic field can ensure the adjustable density of the plasma generated by the cathode so as to ensure the flexible application; and due to the adoption of a one-dimensional linear structure by the cathode, the device occupies small space and has easy installation. Therefore, the whole device has low production cost and can implement a large-area continuous cleaning technique.

Description

[technical field] [0001] The invention relates to the technical field of plasma magnetron cathodes, in particular to a high-efficiency one-dimensional linear plasma cleaning magnetron cathode device. [Background technique] [0002] With the rapid development of today's technology, plasma technology has been widely used in many professional fields and is becoming more and more important. During the production of semiconductor devices and functional thin films, there are problems such as particle adhesion, adsorption of water vapor, surface oxidation, and contamination on the surface of materials and devices, which will lead to poor film adhesion and poor device performance. In order to solve the above problems, the surface needs to be cleaned. Generally, the widely used physical and chemical cleaning methods can be roughly divided into two categories: wet cleaning and dry cleaning. Wet cleaning generally uses acid and alkali solutions to clean the surface of the substrate. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01L21/00H01L21/3065B08B7/00
Inventor 孙卓张哲娟孙鹏刘素霞
Owner SUZHOU SUNLIGHTS TECH
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