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Wet etching solution for transparent conductive film and manufacture method thereof

A technology of transparent conductive film and wet etching, which is applied in the direction of chemical instruments and methods, surface etching compositions, etc., can solve the problems of strong corrosion of strong acid solution, corrosion of metal layers such as aluminum, and low precision of graphic processing, and achieve Less dangerous, lower surface tension, easy to control effect

Inactive Publication Date: 2009-09-02
SUZHOU RUIHONG ELECTRONIC CHEM CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of the above etching solution: the strong acid solution is highly corrosive and dangerous, which will cause corrosion of metal layers such as aluminum, and the graphics processing accuracy is low.

Method used

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  • Wet etching solution for transparent conductive film and manufacture method thereof
  • Wet etching solution for transparent conductive film and manufacture method thereof
  • Wet etching solution for transparent conductive film and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] figure 1 It is a cross-sectional view of a glass substrate a. A layer of amorphous ITO film b is formed on the glass substrate a, and then a photoresist c is coated on the ITO film for exposure and development. Such as figure 1 As shown, the substrate was etched with an aqueous solution of 4 wt% oxalic acid and 0.1 wt% nonylphenol ethoxylate at 50 °C for 2 minutes, then cleaned with deionized water, and stripped with photoresist The photoresist c was removed with liquid, and the etched glass substrate was further cleaned with deionized water, and then dried. Observing the surface with a SEM (field emission electron microscope) showed that the amorphous ITO film was etched well, with smooth lines and no etching residue. Such as figure 2 shown.

Embodiment 2

[0030] As used in Example 1, the substrate was etched with an aqueous solution of 4 wt% oxalic acid and 1 wt% nonylphenol polyoxyethylene ether at 50°C for 2 minutes, then cleaned with deionized water, and then photoresist The photoresist is removed with a stripping solution, and the etched glass substrate is further cleaned with deionized water, and then dried. The surface was observed by SEM, and the results showed that the amorphous ITO film was etched well, with smooth lines and no etching residue.

Embodiment 3

[0032] As in the method used in Example 1, the substrate was etched with an aqueous solution of 1.5 wt% oxalic acid and 0.01 wt% lauryl alcohol polyoxyethylene ether at 50 ° C for 2 minutes, then cleaned with deionized water, and then The photoresist was removed with a photoresist stripper, and the etched glass substrate was washed with deionized water and dried. The surface was observed by SEM, and the results showed that the amorphous ITO film was etched well, with smooth lines and no etching residue.

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PUM

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Abstract

The invention provides a wet etching solution for a transparent conductive film and a manufacture method thereof. The formulation of the wet etching solution comprises 0.1 to 11 weight percent of oxalic acid (ethane diacid), 0.001 to 10 weight percent of surfactant, and 79 to 99.899 weight percent of deionized water; and the preparation method comprises the following steps: firstly adding the deionized water into a dispersion pot, then adding the oxalic acid and the surfactant with stirring, stirring for 10 to 60 minutes to fully dissolve the components evenly, filtering, and discharging. The etching agent can etch amorphous ITO layers under mild condition; the amorphous ITO layers have no residue after etching, and have neat lines and high precision; the technological operation is convenient and easy to control; therefore, the wet etching solution is widely used for etching the transparent conductive film.

Description

technical field [0001] The present invention relates to a wet etching solution, in particular to an etching solution for etching a transparent conductive film used as a pixel electrode in a liquid crystal display and a manufacturing method thereof. Background technique [0002] Transparent conductive films made of indium tin oxide have been widely used in the field of electronic equipment, and with the further upgrading of personal notebook computers, pocket TVs, and information portable terminals, the demand for liquid crystal displays (LCDs) and even OLED displays continues to rise. In the field of flat panel displays, such transparent conductive films such as ITO films are used as pixel electrodes of displays. The production method is as follows: evenly coat a layer of photoresist on the transparent conductive film, cooperate with an appropriate mask plate to expose and develop, and then etch to carve lines, and finally the remaining photoresist remove. [0003] In the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/00
Inventor 赵佳黄巍顾奇
Owner SUZHOU RUIHONG ELECTRONIC CHEM CO LTD