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Method for preparing bonding superfine Al welding wire

A manufacturing method and welding wire technology, which can be applied to manufacturing tools, welding media, welding equipment, etc., can solve the problems of increasing the number of broken wires, reducing work efficiency, etc., so as to reduce the number of broken ends, improve production efficiency, and eliminate surface defects. Effect

Inactive Publication Date: 2013-07-10
LIAOCHENG BEIKE ELECTRONICS INFORMATION MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the appearance of defects on the surface will have an extremely adverse effect on the stretching of micro-filaments, which will increase the number of broken wires and reduce work efficiency

Method used

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  • Method for preparing bonding superfine Al welding wire

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Experimental program
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Effect test

Embodiment 1

[0013] Embodiment 1: A kind of manufacturing method of bonding Al welding wire, the steps are as follows:

[0014] First stretch the Al-1% Si alloy wire billet to Φ1.0mm with an alloy die, and then treat it with 20% NaOH solution at 60°C to remove wire drawing lubricating oil stains on the wire surface, then wash it with water, and then enter chemical polishing. Immerse the length of 100-300mm in the tank, rinse with water after chemical polishing, dry with hot air, and finally take it up with a take-up shaft.

[0015] Its operating process is:

[0016] Wire drawing→greasing→water washing→chemical polishing→water washing→hot air drying→collection.

[0017] Wherein, the chemical polishing fluid is formulated by the following components: phosphoric acid (H 3 PO 4 Specific gravity 1.7) 50-90%, nitric acid (HNO 3 Specific gravity 1.5) 5-20%, glacial acetic acid (CH 3 COOH concentrated) 5~30%, copper chloride (CuCl 2 Crystal) 3-50 g / L, phosphoric acid, nitric acid, and glacia...

Embodiment 2

[0019] Embodiment 2: the Al welding wire prepared in embodiment 1 is stretched to 100~25 μ m by the average deformation rate of 7% per pass, and the speed is 150 m / min, and the average single head length of each wire diameter is obtained. Compared with the average single head length of the wire rod of the same size prepared by common process in the prior art, the results are as follows: figure 1 shown.

[0020] Depend on figure 1 Visible, because the present invention has carried out chemical polishing to the Al alloy wire of Φ1.0mm, has eliminated surface defect, makes surface smooth, and has produced extremely thin and uniform oxide film on the surface, has improved lubricity and reduced the number of broken ends, the same The average single end length of the wire of the present invention is long in diameter, and the difference is large especially below Φ60 μm. At the same time, it can also be seen that when the ultra-fine wire is drawn, the transition point (such as figu...

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Abstract

The invention discloses a method for preparing a bonding superfine Al welding wire, which comprises the steps: an Al and 1 percent Si alloy wire is drawn into a diameter phi of 1.0 mm by an alloy mold; the Al and 1 percent Si alloy wire is processed for 5 to 10 seconds by 20 percent NaOH solution at the temperature of 60 DEG C to remove wire drawing lubricating oil dirty on the surface of the Al and 1 percent Si alloy wire; the Al and 1 percent Si alloy wire is cleaned by water and chemically polished by using chemical polishing liquid which is made of 50-90% of phosphoric acid with a proportion of 1.7, 5-20% of nitric acid with the proportion of 1.5, 5-30% of glacial acetic acid, 3-50g / L of copper chloride, the polishing temperature is 80-100 DEG C, the polishing time is 10-30s, and the polishing amount is 10-50mum; after polished, the Al and 1 percent Si alloy wire is washed by water, and is wound by a wire winding shaft after hot air drying, and a drawn Al welding wire with the diameter of phi 1.0mm is drawn to a fine Al welding wire with the diameter of phi 100-25mum. The method chemically polishes the Al alloy wire with the diameter phi of 1.0 mm, eliminates the surface defects, increases thelubricating property, reduces the decollation time and increases the production efficiency of the Al alloy wire.

Description

technical field [0001] The invention relates to a manufacturing method for bonding fine Al welding wires, and belongs to the technical field of semiconductor devices and integrated circuit packaging lead materials. Background technique [0002] As we all know, in IC packaging, the electrode pads formed on the Si chip semiconductor element and the lead frame are connected by wires, and such wires are usually fine wires with a diameter of 20-50 μm. For the selection of bonding wires, Au wires are the best in terms of conductivity and corrosion resistance, but in terms of material cost and compatibility with the chip substrate, Al wires or Al-1% Si alloy wires are more suitable . [0003] In the drawing process of such fine Al wires with a diameter of 20 to 50 μm, it is very important to reduce the number of breakages and improve its tensile properties, which have a great impact on production efficiency and drawing costs. [0004] The surface condition of the wire has a great...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K35/40
Inventor 门广才
Owner LIAOCHENG BEIKE ELECTRONICS INFORMATION MATERIAL
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