Method for preparing bonding superfine Al welding wire

A manufacturing method and welding wire technology, which can be applied to manufacturing tools, welding media, welding equipment, etc., can solve the problems of increasing the number of broken wires, reducing work efficiency, etc., so as to reduce the number of broken ends, improve production efficiency, and eliminate surface defects. Effect
CN101524799BInactive Publication Date: 2013-07-10LIAOCHENG BEIKE ELECTRONICS INFORMATION MATERIAL
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
LIAOCHENG BEIKE ELECTRONICS INFORMATION MATERIAL
Publication Date
2013-07-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for preparing a bonding superfine Al welding wire, which comprises the steps: an Al and 1 percent Si alloy wire is drawn into a diameter phi of 1.0 mm by an alloy mold; the Al and 1 percent Si alloy wire is processed for 5 to 10 seconds by 20 percent NaOH solution at the temperature of 60 DEG C to remove wire drawing lubricating oil dirty on the surface of the Al and 1 percent Si alloy wire; the Al and 1 percent Si alloy wire is cleaned by water and chemically polished by using chemical polishing liquid which is made of 50-90% of phosphoric acid with a proportion of 1.7, 5-20% of nitric acid with the proportion of 1.5, 5-30% of glacial acetic acid, 3-50g / L of copper chloride, the polishing temperature is 80-100 DEG C, the polishing time is 10-30s, and the polishing amount is 10-50mum; after polished, the Al and 1 percent Si alloy wire is washed by water, and is wound by a wire winding shaft after hot air drying, and a drawn Al welding wire with the diameter of phi 1.0mm is drawn to a fine Al welding wire with the diameter of phi 100-25mum. The method chemically polishes the Al alloy wire with the diameter phi of 1.0 mm, eliminates the surface defects, increases thelubricating property, reduces the decollation time and increases the production efficiency of the Al alloy wire.
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Description

technical field

[0001] The invention relates to a manufacturing method for bonding fine Al welding wires, and belongs to the technical field of semiconductor devices and integrated circuit packaging lead materials. Background technique

[0002] As we all know, in IC packaging, the electrode pads formed on the Si chip semiconductor element and the lead frame are connected by wires, and such wires are usually fine wires with a diameter of 20-50 μm. For the selection of bonding wires, Au wires are the best in terms of conductivity and corrosion resistance, but in terms of material cost and compatibility with the chip substrate, Al wires or Al-1% Si alloy wires are more suitable .

[0003] In the drawing process of such fine Al wires with a diameter of 20 to 50 μm, it is very important to reduce the number of breakages and improve its tensile properties, which have a great impact on production efficiency and drawing costs.

[0004] The surface condition of the wire has a great...

Claims

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