Method for preparing selective emitter crystalline silicon solar cell

A technology of solar cells and emitters, applied in circuits, electrical components, semiconductor devices, etc., can solve confidentiality issues, achieve simple process steps, and improve conversion efficiency

Inactive Publication Date: 2009-09-16
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Selective emitter crystalline silicon solar cells have not yet achieved commercial production, but many manufacturers are developing small-scale production of selective emitter crystalline silicon solar cells, such as Nanjing Zhongdian with Zhao Jianhua as its core technical team Photovoltaic Co., Ltd. has announced that it has realized the production of small-scale selective emitters, and the relevant technical processes are kept secret

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032]The preparation method of the selective emitter crystalline silicon solar cell provided in this example is as follows: firstly, the single-step diffusion method is used to complete the uniform heavy doping of the p-type silicon wafer, and then the front electrode position is screen-printed on the heavily doped silicon wafer. A layer of high molecular polymer material is used as a corrosion-resistant barrier layer, and the rest of the non-front electrode area is chemically etched. After corrosion, the non-electrode area becomes a lightly doped emitter, thus forming a heavily doped under the front electrode and other areas. Lightly doped selective emitter structure, finally, PECVD silicon nitride anti-reflection film, screen printing electrode, sintering and other conventional battery processes are completed on the prepared selective emitter to prepare the selective emitter crystalline silicon solar cell .

[0033] Among them, the high-molecular polymer material is high-qu...

Embodiment 2

[0035] The preparation method of the selective emitter crystalline silicon solar cell provided in this embodiment includes the following steps:

[0036] (1) Uniform P re-diffusion: with POCl 3 As a liquid source, the single-step diffusion method is used to carry out p-re-diffusion on crystalline silicon wafers to prepare p-n + Knot;

[0037] (2) Preparation of anti-corrosion barrier layer: screen printing high molecular polymer anti-corrosion layer at the front electrode area to prevent chemical corrosion liquid from under the front electrode + corrosion in the area;

[0038] (3) Chemical etching of the selective emitter: use chemical etching solution on the n of the non-front electrode area + area for corrosion;

[0039] (4) Removal of the corrosion-resistant barrier layer: using a reagent to peel off the corrosion barrier layer from the silicon wafer;

[0040] (5) Preparation of selective emitter solar cell: On the selective electrode structure treated in the above step...

Embodiment 3

[0051] The preparation method of the selective emitter crystalline silicon solar cell provided in this embodiment includes the following steps:

[0052] (1) First perform uniform P re-diffusion: with POCl 3 As a liquid source, P re-diffusion is carried out on the prepared single crystal silicon and polycrystalline silicon wafers with light trapping structure to prepare p-n + knot, prepared n + The square resistance is 20~30Ω / □;

[0053] (2) Preparation of corrosion-resistant barrier layer: use screen printing technology to screen-print a layer of high-quality acrylic resin polymer protective layer on the electrode area before printing. This protective layer acts as a barrier layer for acid corrosion and prevents acid from Below the front electrode + corrosion in the area;

[0054] (3) Drying and curing of the acid corrosion barrier layer: drying and curing of the corrosion barrier layer at a temperature of 150°C to 200°C;

[0055] (4) Selective emitter corrosion: use HF a...

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PUM

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Abstract

The invention discloses a method for preparing a selective emitter crystalline silicon solar cell, which comprises the following steps: heavily doping a p-type silicon chip by adopting a one-step diffusion method, printing a high molecular polymer material on a silk screen in a front electrode area of the heavily-doped silicon chip as a corrosion-resistant blocking layer, changing the rest non-electrode areas into light doped emitters through chemical corrosion, removing the corrosion-resistant blocking layer to form a selective emitter structure, and finally forming the selective emitter crystalline silicon solar cell by adopting a conventional preparation method of the solar cell. The process steps are relatively simple and easy to achieve large-scale production, and can improve the conversion efficiency of the cells through the emitter structure under the condition of not increasing the manufacturing cost.

Description

technical field [0001] The invention relates to a preparation method of a crystalline silicon solar cell, in particular to a preparation method of a selective emitter crystalline silicon solar cell. Background technique [0002] Since entering this century, the photovoltaic industry has become the fastest growing high-tech industry in the world. Among all kinds of solar cells, crystalline silicon (monocrystalline silicon, polycrystalline silicon) solar cells occupy an extremely important position, and currently occupy more than 90% of the photovoltaic market. From the perspective of the world's photovoltaic production, the production of solar cells in 2007 reached 4.2GW, which was double that of 2006. Although the photovoltaic industry was hit by the global financial crisis at the end of 2008, the production in 2008 was still More than 5GW. The output of solar cells in my country has developed rapidly in recent years. In 2007, the output was 1.2GW, and the production capac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 梁宗存沈辉曾飞陈达明
Owner SUN YAT SEN UNIV
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