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Method for producing silicon carbide substrate and silicon carbide substrate

A silicon carbide substrate and silicon carbide technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, post-processing details, etc., can solve the problems of increased cost, low productivity, low polishing efficiency, etc., and achieve the goal of improving flatness Effect

Inactive Publication Date: 2009-09-16
SUMITOMO ELECTRIC IND LTD
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  • Summary
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  • Application Information

AI Technical Summary

Problems solved by technology

In order to grow a high-quality flat nitride semiconductor crystal on a SiC substrate, therefore, it is necessary to perform mirror finishing (finishing) on ​​the SiC substrate for preventing defects and roughness, and because the SiC substrate is extremely hard and chemically is stable, so that there are problems of low polishing efficiency, low productivity and increased cost

Method used

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  • Method for producing silicon carbide substrate and silicon carbide substrate
  • Method for producing silicon carbide substrate and silicon carbide substrate
  • Method for producing silicon carbide substrate and silicon carbide substrate

Examples

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example 1

[0047] Such as Figure 6 As shown, a 2-inch substrate 51 of 6H-SiC, the (0001) surface of which was polished to a mirror surface, was set into a susceptor 52 of a hydrogen etching furnace. Regarding the surface orientation of the main surface in the SiC substrate, the inclination angle from the (0001) plane to the (1-100) plane was set to 0.03° to 0.5°. The susceptor 52 in the furnace is made of SiC-coated high-purity graphite, and the heat insulator 53 is made of fibrous graphite. A coil 54 is arranged on the periphery of the furnace through a quartz chamber 55, and a high-frequency current is fed to the coil for induction heating the SiC substrate in the furnace. The temperature at the underside of the susceptor was measured with a radiation thermometer, the induced current was controlled, and the temperature was set to 1450°C. at 0.1cm 3 6N high-purity hydrogen was fed into the furnace per min, and the furnace was evacuated and replaced with 3 kPa hydrogen for performing...

example 2

[0050] Similar to Example 1, a SiC substrate was produced with respect to a substrate having a main surface whose surface orientation was inclined by 0.02° from the (0001) plane to the (1-100) plane. As a result, it was observed by AFM as Figure 4 The bowl-shaped depression defect (spiral depression) shown. exist Figure 4 The minimum radius of curvature of the step presented on the deepest periphery of the central portion of the shown depression (critical radius; corresponding to Figure 4 1 / 4) of the distance between the two arrows shown is 725 nm. Steps from screw dislocations are hardly coupled with steps due to substrate inclination due to tilting from the (0001) plane of the substrate when, in the substrate, the initially existing step width is greater than the minimum radius of curvature of the helical depression , for bowl-shaped etching, a spiral depression is formed. On the other hand, when the step width is smaller than the minimum radius of curvature, no helic...

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Abstract

The present invention provides a method for producing a silicon carbide substrate for forming a semiconductor layer by inclining the surface orientation of a major surface (1) of a substrate by 0.03 to 1 DEG from the (0001) plane and performing hydrogen gas etching at 1250 DEG C to 1700 DEG C. Also disclosed is an SiC substrate, which has only a few spiral pits and is excellent in surface flatness.

Description

technical field [0001] The present invention relates to a silicon carbide (SiC) substrate used for manufacturing a semiconductor device and a method of manufacturing the silicon carbide substrate. Background technique [0002] Nitride semiconductors used in light-emitting devices and transistors are mainly produced by heteroepitaxial growth on sapphire substrates or SiC substrates. In particular, SiC substrates are excellent in lattice matching with nitride semiconductors, whereby high-quality nitride semiconductor crystals can be easily stacked thereon. In addition, the thermal conductivity of SiC substrates is excellent, giving SiC substrates an excellent advantage for manufacturing high-output devices. SiC crystals are classified into several types corresponding to the crystal structure. Two types including 4H-SiC and 6H-SiC are mainly used in nitride semiconductors. In 4H-SiC, pairs of silicon and carbon are stacked in four periods in the (0001) direction, and in 6H-Si...

Claims

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Application Information

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IPC IPC(8): H01L21/302H01L21/205H01L33/00
CPCH01L21/0475C30B29/36C30B33/12H01L29/1608H01L29/045H01L33/20
Inventor 木下博之须田淳木本恒畅
Owner SUMITOMO ELECTRIC IND LTD
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