Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and device for preparing silicon nanoparticles by utilizing plasma body

A silicon nanoparticle and plasma technology, applied in the field of nanomaterials, can solve problems such as gaps and achieve the effect of cost reduction

Inactive Publication Date: 2009-10-21
ZHEJIANG UNIV +1
View PDF6 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the productivity of the gas phase method can reach 0.2 g / hour (Li et al., Process for preparing macroscopic quantities of brightly photoluminescent silicon nanoparticles with emission spanning the visible spectrum, Langgmuir 19 (2003), 8490-8496), this is still far from the requirements of industrial production. there is a big gap

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for preparing silicon nanoparticles by utilizing plasma body
  • Method and device for preparing silicon nanoparticles by utilizing plasma body
  • Method and device for preparing silicon nanoparticles by utilizing plasma body

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] See figure 1 , The device of the present invention for preparing silicon nanoparticles using plasma includes a tubular plasma chamber 2. One end of the plasma chamber 2 is connected to the gas inlet pipe 1, and the other end is connected to a collector. The collector consists of a stainless steel collection bottle 11 and a built-in collection bag. In this embodiment, two collectors are connected in series with each other. The latter collector is connected to a vacuum pipeline interface 13 and connected to a vacuum pump. The collector has a ground wire 10.

[0053] The plasma chamber 2 is jacketed with a heating jacket 9 for heating the plasma chamber 2, and an excitation device for exciting plasma is provided outside the heating jacket 9.

[0054] The excitation device selects a radio frequency power supply to excite the plasma, including a ring-shaped radio frequency electrode 3 made of metal copper arranged outside the plasma cavity and connected to the radio frequency m...

Embodiment 2~4

[0061] The device of Example 1 was used to prepare silicon nanoparticles. 5 slm of silicon tetrachloride gas, 11 slm of hydrogen, and 150 slm of argon were mixed and then entered into the inner tube of the inlet pipe made of quartz. Enter between the inner and outer tubes. Inner diameter of outer tube D 2 With the inner diameter of the inner tube D 1 The ratio is 15:1.

[0062] The air pressure in the quartz plasma chamber is adjusted to 1.5×10 by a vacuum pump connected to the collector 4 Pa. The power of the microwave (2.4 GHz) applied to the plasma is 2.5 kW (Example 2), 3 kW (Example 3), or 4 (Example 4) kW. The distance between the microwave resonator and the stainless steel coupling is 15 cm. The temperature of the heating jacket is set at 200°C. The generated silicon nanoparticles are continuously collected by two collection bags made of nickel wire mesh.

[0063] X-ray diffraction (XRD) measurement (see Figure 4 ) Indicates that the prepared silicon nanoparticles are cryst...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Average sizeaaaaaaaaaa
Sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method and a device for preparing silicon nanoparticles by utilizing a plasma body. The method comprises the following steps: introducing mixed gas containing a silicon-containing air source and inert gas into a plasma body cavity; exciting the gas in the plasma body cavity to make the silicon-containing air source converted into the silicon nanoparticles; and collecting the silicon nanoparticles by the collection device after the silicon nanoparticles are taken out of the plasma body cavity by air current. The method can use the high-power plasma body in the process of preparing the silicon nanoparticles, simultaneously avoids depositing the silicon nanoparticles on the inner wall of the plasma body cavity, and improves the collection of the silicon nanoparticles in a gas phase. The method and the device ensure that the preparation of the silicon nanoparticles meets the requirements of large-scale production.

Description

Technical field [0001] The invention relates to the technical field of nanomaterials, and in particular to a method and device for preparing silicon nanoparticles by using radio frequency or microwave plasma. Background technique [0002] Silicon nanoparticles have very broad application prospects in the fields of electronics, optoelectronics, photovoltaics and biomedicine. On the one hand, they can be easily integrated into traditional device manufacturing processes to enhance the functions of traditional devices; on the other hand, they greatly promote the production of new processes and new devices. For example, printed electronics based on silicon nanoparticles will profoundly change the manufacturing process of silicon devices, greatly reducing the cost of various silicon devices such as transistors and solar cells. As we all know, bulk monocrystalline silicon is the foundation of the large-scale integrated circuit industry. Similarly, silicon nanoparticles must be the found...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/021
Inventor 皮孝东杨德仁韩庆荣
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products