Plasma etching residual washing liquid

Abstract

The invention discloses a plasma etching residual washing liquid which contains hydroxylamine and derivate thereof, solvent, water and chelating agent. The plasma etching residual washing liquid is characterized by also comprising carboxylic polymer and polymer containing paint affinity groups and is compounded by the carboxylic polymer and the polymer containing paint affinity groups, thereby radically solving the problem of metal corrosion, particularly aluminum corrosion caused by rinsing with water during the washing in a wet method washing of the traditional hydroxylamine washing liquid in a process of semiconductor manufacture and omitting the solvent rinsing for avoiding the metal corrosion after the washing by the transitional hydroxylamine washing liquid. The invention keeps stronger washing property of the prior hydroxylamine washing liquid, causes metal corrosion, particularly aluminum corrosion resulted from direct washing by water after the washing of wafer, can remove the solvent washing procedure after the removal of plasma etching residual, and is beneficial to reduce the pollution and lower the cost.

Description

technical field [0001] The invention relates to a cleaning solution in a semiconductor manufacturing process, in particular to a cleaning solution for plasma etching residues. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step is to remove most of the photoresist layer (PR) by dry ashing; the se...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the cost caused by the use of solvent rinsing steps in the wet cleaning step of the semiconductor manufacturing process. Higher, more polluted defects, and provide a plasma etching residue cleaning solution that can be rinsed directly with water, but will not cause metal corrosion, and can ensure a better cleaning effect

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