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Manufacturing method for lower substrate structure of carbon nano tube field emission display

A field emission and carbon nanotube technology, which is applied in the manufacture of discharge tubes/lamps, cold cathodes, and electrode systems, and can solve problems such as complex manufacturing processes, short-circuiting of carbon nanotubes, and demanding manufacturing processes.

Inactive Publication Date: 2009-10-28
IRICO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the previous grid structure, the grid strip is located directly above the carbon nanotube cathode, because the grid aperture is very small and the distance to the cathode is very close, it is difficult to fill the carbon nanotube slurry in the grid aperture, but it is easy Connect the carbon nanotubes to the gate electrode to short circuit
The gate current formed by it is relatively large, and the requirements for the material of the device are relatively high. During the manufacturing process of the device, the carbon nanotube cathode is easily damaged and polluted to a certain extent. Although various enterprises and research institutions use special materials and manufacturing processes , still brings a series of problems, such as: the device manufacturing cost is too high; the manufacturing process is complicated
The production process is too demanding, etc.

Method used

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  • Manufacturing method for lower substrate structure of carbon nano tube field emission display
  • Manufacturing method for lower substrate structure of carbon nano tube field emission display
  • Manufacturing method for lower substrate structure of carbon nano tube field emission display

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Such as figure 1 and Figure 7 As shown: (1) First, on the lower substrate 1 of the field emission display after being ultrasonically cleaned with acetone, the grid electrode layer 2 comprising a plurality of parallel strip grid electrodes is directly printed by screen printing, and the grid electrode layer 2 is directly printed at 100 ℃, under normal pressure, drying for 20 minutes, and then at 570 ℃, under normal pressure, sintering for 20 minutes; the material of the gate electrode layer 2 is silver paste.

[0046] Such as figure 2 As shown: (2) Print the entire surface of the water-soluble insulating medium layer 3 on the gate electrode layer 2, and dry the water-soluble insulating medium layer 3 at 130°C under normal pressure for 10 minutes, then at 580°C, Under normal pressure, sinter for 20 minutes.

[0047] (3) Then print the entire cathode electrode layer 4 on the water-soluble insulating medium layer 3 after sintering, and then dry it for 30 minutes at 80°...

Embodiment 2

[0064] Such as figure 1 and Figure 7 Shown: (1) Print the entire gate electrode layer 2 on the lower substrate 1 of the field emission display after being ultrasonically cleaned with acetone, and then dry it for 30 minutes at 100° C. under normal pressure. Using the film graphic model of the gate electrode layer as a mask, the entire gate electrode layer 2 is exposed and developed by photolithography, so that the entire gate electrode layer 2 forms a grid consisting of multiple parallel strip gate electrodes. Gate electrode layer 2 ; then, the gate electrode layer 2 after photolithography was sintered at 570° C. under normal pressure for 20 minutes. The exposure energy is 800mJ, and the developing solution is 0.3% sodium carbonate solution. The material of the gate electrode layer 2 is photosensitive silver paste.

[0065] Such as figure 2 As shown: (2) Print the first layer of the entire surface of the water-soluble insulating dielectric layer 3 on the sintered gate ele...

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Abstract

The invention relates to a field emission display, in particular to a manufacturing method for a lower substrate structure of a carbon nano tube field emission display. The manufacturing method comprises the following steps: preparing a grid electrode layer on the lower substrate of a field emission display; printing an integral surface water-soluble insulating dielectric layer on the grid electrode layer; printing an integral surface cathode electrode layer on the integral surface water-soluble insulating dielectric layer; using an artwork drawing model as a mask; performing exposure imaging on the integral surface cathode electrode layer by a pholithography; using the cathode electrode layer as a mask; performing wet-method etching on the integral surface water-soluble insulating dielectric layer to form a water-soluble insulating dielectric layer having the same drawing with the cathode electrode layer; printing a compact thin material layer on the cathode electrode layer; covering a carbon nano tube cathode material layer on the compact thin material layer; and finally simultaneously sintering the compact thin material layer and the carbon nano tube cathode material layer. The lower substrate structure avoids the difficulty that a carbon nano tube is filled in a grid hole, and a carbon nano tube is arranged above the cathode electrode layer.

Description

1. Technical field: [0001] The invention relates to a field emission display, in particular to a method for manufacturing a lower substrate structure of a carbon nanotube field emission display. 2. Background technology: [0002] Carbon nanotubes are a special cold cathode material with high aspect ratio, small tip curvature radius, and can emit a large number of electrons under the action of an applied voltage, which has attracted people's attention. As a new type of display technology, carbon nanotube field emission display devices still cannot effectively solve some technical bottlenecks. Among them, efficient device structure design and fabrication is a typical problem. The simple two-pole structure carbon nanotube field emission display screen has a simple manufacturing process, but on the one hand, the anode needs high voltage to give electrons enough energy to bombard the phosphor to achieve high brightness; The circuit also requires low voltage, so there is an irre...

Claims

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Application Information

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IPC IPC(8): H01J9/00H01J9/02
Inventor 赵莉
Owner IRICO
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