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Chemical-mechanical polishing solution for SiSb based phase-changing materials

A phase-change material, chemical-mechanical technology, applied in polishing compositions containing abrasives, electrical components, etc., can solve problems such as no reports, achieve good surface quality, meet the needs of CMP process, and control the rate. Effect

Inactive Publication Date: 2009-11-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there has been no report on the CMP of SiSb-based phase-change memory materials.

Method used

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  • Chemical-mechanical polishing solution for SiSb based phase-changing materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] The polishing liquid is composed as follows (parts by weight):

[0057] Cerium oxide particle content (particle size 10nm): 30wt%;

[0058] Hydrogen peroxide: 0.01wt%;

[0059] Sodium polyacrylate: 4wt%;

[0060] Proline: 0.3wt%;

[0061] pH value (adjusted with nitric acid): 3;

[0062] The rest is deionized water.

[0063] The polishing test results are shown in Table 1.

Embodiment 2

[0065] The polishing liquid is composed as follows (parts by weight):

[0066] Titanium oxide particle content (particle size 150nm): 2wt%;

[0067] Potassium ferricyanide: 1.5wt%;

[0068] Sodium polyoxyethylene sulfate: 0.5wt%;

[0069] Citric acid: 0.2wt%;

[0070] pH value (phosphoric acid adjustment): 5;

[0071] The rest is deionized water.

[0072] The polishing test results are shown in Table 1.

Embodiment 3

[0074] The polishing liquid is composed as follows (parts by weight):

[0075] Alumina particle content (particle size 80nm): 4wt%;

[0076] Ammonium persulfate: 3wt%;

[0077] Sodium polyoxyethylene sulfate: 0.5wt%;

[0078] Salicylic acid: 1wt%;

[0079] pH value (potassium hydroxide adjustment): 11;

[0080] The rest is deionized water.

[0081] The polishing test results are shown in Table 1.

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Abstract

The invention relates to chemical-mechanical polishing solution for SiSb based phase-changing materials, comprising: 0.2-30wt. % of oxidic polishing grains, 0.01-5wt. % of oxidant, 0.01-4wt. % of surfactant, 0.01-3wt. % of organic addition agent, and the remainder pH modifier and aqueous medium. The polishing of the SiSb based phase-changing materials by the chemical-mechanical polishing solution has controllable speeds, good surface qualities and low damages, which can meet the requirements of CMP processing in the manufacturing of nano-electronic phase-change memories. By the chemical-mechanical polishing solution, the polishing speed of the SiSb based phase-changing materials can be controlled to be 5-2000nm / min; and the surface roughness is reduced to be less than 0.7nm.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing liquid for phase change materials, in particular to a chemical mechanical polishing liquid for SiSb-based phase change materials. Background technique [0002] Phase change memory is considered by the International Semiconductor Industry Association as a Next-generation non-volatile memory most likely to replace current flash memory. [0003] The basic principle of phase change memory technology is to use chalcogenide as the storage medium, and use electric energy (heat) to convert the material between the crystalline state (low resistance) and the amorphous state (high resistance) to realize the writing and erasing of information. , The readout of information is realized by measuring the change of resistance. The memory cell includes a pore defined by a dielectric material in which a phase change material is deposited, the phase change material being connected to an electr...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L45/00
Inventor 王良咏宋志棠刘波封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI