Detection method for evaluating group III nitride single crystal surface dislocation

A detection method and nitride technology, applied in surface/boundary effects, measurement devices, preparation of test samples, etc., can solve problems such as inability to distinguish dislocation types, long period, pollution, etc., to improve performance evaluation efficiency, promote The effect of further development and accurate determination
CN101598655AInactive Publication Date: 2009-12-09SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Publication Date
2009-12-09
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a detection method for determining group III nitride single crystal surface dislocation type and counting density of different dislocations by accurate positioning of an atomic force microscope, belonging to the semiconductor material quality check field. The aim of the invention is realized by the following steps: a detection region is marked, the atomic force microscope is utilized to test the surface topography of the marked region, a sample is corroded for a plurality of times and the same marked detection region is tested repeatedly by the atomic force microscope after corrosion each time, corrosion rate of each corrosion dislocation pit is obtained by counting after a plurality of times of corrosions and tests, corresponding dislocation type is judged, thus counting density of different dislocations. The invention breaks through the traditional dislocation detection method by a transmission electron microscope, has simple quadrat method, accurate and efficient dislocation type determination, not only can be used in quality check of various semiconductor materials in industry to promote the development of group III nitride base photoelectric devices in photoelectric industry, but also can be applied to scientific research on film material dislocation corrosion kinetics.
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Description

technical field

[0001] The invention relates to a method for detecting the surface quality of semiconductor materials, in particular to a method for evaluating and detecting single crystal dislocations on the surface of group III nitrides. Background technique

[0002] The atomic force microscope is an analytical instrument developed on the basis of the scanning tunneling microscope and can be used to study the surface structure of various nanomaterials including insulators. It can work in different environments such as vacuum, atmosphere and normal temperature, without special sample preparation technology, and the detection process will not damage the sample, and the resolutions in the direction parallel to and perpendicular to the sample surface can reach 0.1nm and 0.01nm respectively Resolve individual atoms with atomic-level resolution. With the continuous advancement of technology, the atomic force microscope has developed from the initial surface morphology and struc...

Claims

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