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Mg-Na codoped ZnO-base light emitting diode and preparation method thereof

A light-emitting diode, mg-na technology, applied in electrical components, circuits, semiconductor devices, etc., to achieve the effect of improving stability, high brightness, and reducing growth steps

Inactive Publication Date: 2009-12-16
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the current research on ZnO-based light-emitting diodes, there are no reports on prototype devices that can emit high brightness and emit light for a long time at room temperature.

Method used

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  • Mg-Na codoped ZnO-base light emitting diode and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0021] Prepare the Mg-Na co-doped ZnO-based light-emitting diode according to the following steps:

[0022] (1) Weigh 38.61 grams of pure ZnO, 1.15 grams of MgO, and Na 2 CO 3 It is 0.053 grams of powder, in which the molar percentage of Mg is 5% and the molar percentage of Na is 0.1%. The above powders are uniformly mixed by ball milling, pressed and molded, and then sintered at 1000 ℃ to obtain Mg-Na total Doped ZnO ceramic target.

[0023] (2) With a 10mm×10mm low-resistance n-ZnO (0001) single crystal as the substrate, put the substrate and the prepared ZnO ceramic target into the growth chamber of the pulsed laser deposition system, and the vacuum degree of the growth chamber is pumped to 4.0 ×10 -4 Pa, then heat the substrate to raise the substrate temperature to 400°C, input oxygen, adjust the oxygen pressure to 30Pa, set the laser parameters to 330mJ, 5Hz, and the substrate and the ZnO ceramic target at a distance of 4.5cm, and deposit under this condition A layer of about...

Embodiment 2

[0027] 1) Weigh 35.608 grams of pure ZnO, 2.76 grams of MgO, and Na 2 CO 3 It is 0.265 grams of powder, in which the molar percentage of Mg is 12% and the molar percentage of Na is 0.5%. The above powders are ball-milled and mixed uniformly, pressed and molded, and then sintered at a temperature of 1100°C to obtain Mg-Na. Doped ZnO ceramic target.

[0028] 2) Take the 10mm×10mm n-ZnO(0001) single crystal as the substrate, put the substrate and the prepared ZnO ceramic target into the growth chamber of the pulsed laser deposition system, and pump the vacuum degree of the growth chamber to 4.0×10 -4 Pa, then heat the substrate to raise the substrate temperature to 500℃, input oxygen, adjust the oxygen pressure to 40Pa, set the laser parameters to 330mJ, 5Hz, and the substrate and the ZnO ceramic target at a distance of 4.5cm, and deposit under this condition A p-type ZnO layer co-doped with Mg-Na of about 400 nm, the hole concentration of p-type ZnO can be as high as 8.0×10 17 cm -3...

Embodiment 3

[0033] 1) Weigh pure ZnO to 32.556 grams, MgO to 3.8 grams, and Na 2 CO 3 It is 0.53 grams of powder, in which the molar percentage of Mg is 19%, and the molar percentage of Na is 1%. The above-mentioned powders are ball-milled and mixed uniformly, pressed and molded, and then sintered at 1200°C to obtain Mg-Na. Doped ZnO ceramic target.

[0034] 2) Take the 10mm×10mm n-ZnO(0001) single crystal as the substrate, put the substrate and the prepared ZnO ceramic target into the growth chamber of the pulsed laser deposition system, and pump the vacuum degree of the growth chamber to 4.0×10 -4Pa, then heat the substrate to raise the substrate temperature to 680℃, input oxygen, adjust the oxygen pressure to 50Pa, set the laser parameters to 330mJ, 5Hz, and the substrate and the ZnO ceramic target at a distance of 4.5cm, and deposit under this condition A p-type ZnO layer of about 500nm Mg-Na co-doped, the hole concentration of p-type ZnO can be as high as 2.0×10 17 cm -3 . Then the oxyge...

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Abstract

The invention discloses an Mg-Na codoped ZnO-base light emitting diode and a preparation method thereof. The Mg-Na codoped ZnO-base light emitting diode comprises a p-type layer, an n-type layer and electrodes, wherein the p-type layer is an Mg-Na codoped ZnO thin film; and the n-type layer is an n-type ZnO monocrystal substrate. The method for preparing the light emitting diode comprises the following steps: depositing an Mg-Na codoped p-type ZnO layer on the n-type ZnO monocrystal substrate by using a pulsed laser deposition method, wherein the molar percentage of Mg in a target material is 5 to 20 percent, the molar percentage of Na in the target material is 0.1 to 1 percent, and a growth atmosphere is oxygen; growing a ZnO thin film with excellent p-type performance by controlling growth temperature, air pressure, laser frequency and other parameters; and depositing electrodes on an n-type ZnO layer and the p-type ZnO layer through magnetronsputtering respectively. The method has the advantages of simplicity, and the prepared Mg-Na codoped ZnO-base light emitting diode has high brightness.

Description

Technical field [0001] The invention relates to a ZnO-based light-emitting diode co-doped with other elements and a preparation method thereof. Background technique [0002] As a direct wide band gap compound semiconductor material, zinc oxide (ZnO) has a room temperature band gap of 3.37 eV, an exciton binding energy of 60 meV, and a heat energy of 26 meV higher than room temperature. It is also much higher than other semiconductor materials. In addition, ZnO also has heat Good stability, low epitaxial growth temperature, strong radiation resistance, abundant sources, low cost, non-toxic and pollution-free. It is widely used in light-emitting devices. The exciton binding energy in ZnO is 60 meV, which can exist stably at room temperature and above, and the threshold of stimulated radiation induced by exciton-exciton scattering is lower than that of electron-hole plasma recombination. So ZnO is an ideal material for preparing light-emitting diodes (LEDs) at room temperature and h...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 叶志镇张利强黄靖云张银珠朱丽萍汪雷蒋杰薛雅张俊
Owner ZHEJIANG UNIV