SILICON BASED SOLID STATE LIGHTING and manufacturing method thereof

Abstract

The present invention relates to a silicon based solid state lighting. The semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.

Description

technical field [0001] This patent application relates to a solid state lighting device. Background technique [0002] Solid-state light sources such as light-emitting diodes (LEDs) and solid-state lasers offer significant advantages over other forms of lighting such as incandescent or fluorescent lighting. For example, when LEDs or solid-state lasers are arranged as an array of red, green and blue elements, they can be used as a white light source or as a multicolor display. In such configurations, solid-state light sources are typically more efficient and generate less heat than traditional incandescent or fluorescent lights. Although solid-state lighting offers certain advantages, conventional semiconductor structures and devices for solid-state lighting are relatively expensive. One of the costs associated with conventional solid state lighting devices relates to the relatively low manufacturing throughput of conventional solid state lighting devices. [0003] refer t...

AI Technical Summary

Problems solved by technology

Another disadvantage of the conventional LED structure 100 described above is that suitable substrates such as sapphire or silicon carbide are generally not available in single crystal form.

As a result, the light emitting performance of the LED structure 100 is impaired

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