Semiconductor device and method of manufacturing same

A manufacturing method and semiconductor technology, which can be used in the manufacture of semiconductor/solid-state devices, semiconductor devices, and electric solid-state devices, etc., can solve problems such as the occurrence of oxygen defects, the reverse charge amount of the ferroelectric film, or the deterioration of the leakage current value, and achieve improved characteristics. Effect

Active Publication Date: 2010-01-27
FUJITSU SEMICON MEMORY SOLUTION LTD KANAGAWA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ferroelectric film constituting the ferroelectric capacitor tends to generate oxygen vacancies due to the treatment in a non-oxidizing environment, which deteriorates the characteristics of the ferroelectric film, such as the amount of reverse charge and the value of leakage current.

Method used

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  • Semiconductor device and method of manufacturing same
  • Semiconductor device and method of manufacturing same
  • Semiconductor device and method of manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0121] Figure 3A It is a figure which shows the structure of the ferroelectric capacitor 10 of 1st Embodiment of this invention.

[0122] refer to Figure 3A , the ferroelectric capacitor 10 is composed of an orientation control film 12, a conductive oxygen barrier film 13, a lower electrode 14, a ferroelectric film 15, a conductive oxide film 16, a conductive oxide film 17, a stoichiometric composition region 17A, and a metal film 18, and The conductive oxide film 16 and the conductive oxide film 17 including the stoichiometric composition region 17A are formed together with the metal film 18 Figure 3A The upper electrode of the ferroelectric capacitor 10 in the above, wherein the orientation control film 12 is formed on a silicon oxide film 11 for covering a silicon substrate (not shown), and is formed on the silicon oxide film 11 with ( 111) Oriented TiN film or Ti film with (002) orientation is used to control the crystallographic orientation of the ferroelectric capac...

no. 2 approach

[0174] Below, refer to Figure 12 A to 12V will describe the manufacturing process of the ferroelectric memory according to the second embodiment of the present invention.

[0175] refer to Figure 12 A. An n-type well is formed in the silicon substrate 61 as an element region 61A, and a first MOS transistor having a polysilicon gate electrode 63A and a polysilicon gate electrode 63B are formed on the element region 61A via gate insulating films 62A and 62B, respectively. of the second MOS transistor.

[0176] Further, in the silicon substrate 61, p is formed on both sidewall surfaces corresponding to the gate electrode 63A. - type LDD regions 61a and 61b, and p is formed on both sidewall surfaces corresponding to the gate electrode 13B. - type LDD regions 61c and 61d. Here, since the first and second MOS transistors are formed together in the element region 61A, they share the same p - Type diffusion regions serve as the LDD region 61b and the LDD region 61c.

[0177] A...

no. 3 approach

[0208] Figure 13 The structure of the ferroelectric memory of the third embodiment of the present invention is shown. In the drawings, the same reference numerals are assigned to the parts described above, and the description thereof is omitted.

[0209] previously explained Figure 12 In the embodiment of A to 12V, in Figure 12 In step B, the through-hole inserts 69A and 69C are formed by filling the through-holes 68A and 68C with a tungsten film, and then removing the excess tungsten film on the interlayer insulating film 68 by CMP. It is difficult to completely flatten the surfaces of the through-hole inserts 69A and 69B by such a CMP method, and concave portions having a depth of 20 to 50 nm are usually formed in the upper portions of the through-hole inserts 69A and 69C.

[0210] Since such a concave portion has a great influence on the crystal orientation of the ferroelectric capacitor formed thereon, in the present embodiment, the above-mentioned Figure 12 After ...

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Abstract

A semiconductor device having a substrate and, superimposed thereon, a ferroelectric capacitor. The ferroelectric capacitor is composed of an inferior electrode and, sequentially superimposed thereon, a ferroelectric film and a superior electrode. The superior electrode is composed of a first layer of oxide whose stoichiometric composition is represented by the chemical formula AOx1 in which x1 is a composition parameter and whose actual composition is represented by the chemical formula AOx2 in which x2 is a composition parameter and, sequentially superimposed on the first layer, a second layer of oxidewhose stoichiometric composition is represented by the chemical formula BOy1 in which y1 is a composition parameter and whose actual composition is represented by the chemical formula BOy2 in which y2 is a composition parameter and a metal layer. The second layer has a proportion of oxidation higher than that of the first layer. The composition parameters x1, x2, y1 and y2 satisfy the relationship y2/y1 > x2/x1. The second layer at its interface with the metal layer is provided with an interfacial layer of stoichiometric compositionwith an increased oxidation proportion.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular, to a semiconductor device having a ferroelectric capacitor and a manufacturing method thereof. Background technique [0002] A ferroelectric memory is a voltage-driven nonvolatile semiconductor memory element, and has excellent characteristics that it operates quickly, consumes less power, and stores stored information even when the power is turned off. Ferroelectric memories have been used in IC cards and portable electronic devices. [0003] A typical FeRAM has a ferroelectric capacitor in which a ferroelectric film is sandwiched by a pair of electrodes, and information is stored in the ferroelectric capacitor by causing polarization in accordance with a voltage applied between the electrodes. The information written in the ferroelectric film in the polarized form in this way can be retained even if the applied voltage is removed. [0004] In this ferroelectric capacitor, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8246H01L27/105
CPCH01L27/11507H01L27/11502H01L28/40H01L28/55H01L28/65H10B53/30H10B53/00H01L27/105H10B99/00
Inventor 王文生
Owner FUJITSU SEMICON MEMORY SOLUTION LTD KANAGAWA
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